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Article
On the nature of microwave deposited hard silicon-carbon films
Hydrogenated silicon-carbon films have been deposited from argon tetramethylsilane mixtures at 873 or 673 K, with or without hydrogen dilution and at 673 K with silane addition, by using microwave assisted CVD...
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Article
Ceramic thin film thickness determination by nano-indentation
Abstracts are not published in this journal
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Chapter
Single-source precursors for the chemical vapor deposition of titanium and vanadium carbide and nitride
A comparative study of a series of 28 single organometallic precursors to the binary ceramic phases TiC, TiN, VC, VN is reported. The design of the molecules, their thermal behavior, and their use in CVD appli...
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Article
Theoretical approach to chemical vapour deposition in the atomic system Ti-Si-C-CI-H
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Article
Thermodynamic and experimental study of CVD of non-stoichiometric titanium nitride from TiCl4N2-H2 mixtures
Using the polynomial description of the Gibbs free energy of formation of titanium nitride against its composition, thermodynamic deposition diagrams were determined at 1900 K. The description of the whole ran...
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Article
Calculation of deposition conditions for Si3N4 from a SiL4-NH3 gas phase (L=H, Cl, Br, CH)
Deposition conditions yielding silicon nitride are calculated for a set of initial gaseous systems, by complex thermodynamic equilibria computations. The influence of temperature, total pressure and reactant g...
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Article
On the theoretical conditions of chemical deposition of refractory solid solutions: titanium carbonitride