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Article
A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether ...
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Article
Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing
We fabricated a 0.18-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etchi...
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Article
DC and RF characteristics of AlGaN/GaN HEMTs on SiC with gate recessed by using ICP etching of BCl3/Cl2
We fabricated a 0.17-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC recessed by using ICP gate etching with a gas mixture of BCl3/Cl2. The ICP gate recess process exhibited an etch rate ...
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Article
Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs
An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device describ...
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Article
Fabrication and electrical properties of an AlGaN/GaN HEMT on SiC with a taper-shaped backside via hole
SiC substrates and GaN/AlGaN epitaxial layers were etched by using an inductively-coupled plasma (ICP) in order to electrically connect the backside metal to the source electrode pads on the front-side of an A...
