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    Article

    A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices

    In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the desired gate recess depth is made by measuring whether ...

    Byoung-Gue Min, Sung-Jae Chang, Hyun-Wook Jung… in Journal of the Korean Physical Society (2020)

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    Article

    Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact

    Ohmic contacts are formed by recess etching the source and the drain regions with line and dot patterns of a few hundred nanometers on an AlGaN/GaN heterostructure and treating the surface with tetramethylammo...

    Hyun-Wook Jung, Sung-Jae Chang, Ho-Kyun Ahn… in Journal of the Korean Physical Society (2020)