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Article
Low-temperature synthesis of MoS2 at 200 °C
Two-dimensional (2D) materials such as graphene and MoX2 (X = S, Se, W, Te) are very important for the next-generation electronic devices. One of the most exciting materials in 2D materials is MoS2 and the most i...
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Article
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
As the data transfer rates in various mobile systems increase, the needs for 5G wireless communication systems have also been correspondingly increased. For the enhancement of data transfer rates, 28 GHz, one ...
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Article
Performance dependence on the geometry of H-shaped optical antennas
The nano-antenna in the optical region has a great advantage in the field of nano-science. The H-shaped antenna has exhibited electric field enhancement due to coupling between slot and arms. It has been obse...
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Article
Fabrication and electrical properties of an AlGaN/GaN HEMT on SiC with a taper-shaped backside via hole
SiC substrates and GaN/AlGaN epitaxial layers were etched by using an inductively-coupled plasma (ICP) in order to electrically connect the backside metal to the source electrode pads on the front-side of an A...
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Article
Characteristics of Ga and Ag-doped ZnO-based nanowires for an ethanol gas sensor prepared by hot-walled pulsed laser deposition
Pure ZnO and Ga (3 % w/w) and Ag (3 % w/w)-doped ZnO nanowires (NWs) have been grown by use of the hot-walled pulse laser deposition technique. The do** characteristics of Ga and Ag in ZnO NWs were analyzed by ...
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Article
Numerical investigation of a hybrid-connection four-junction solar cell structure based on detailed balance calculation
On the basis of the detailed balance limit model, we calculated limiting efficiency, optimum bandgap energy combination, current density–voltage (J–V) characteristics, and theoretical efficiency for the candidate...
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Article
Evaluation of cutting characterization in plasma cutting of thick steel ship plates
In this paper, we studied the characteristics of the plasma cutting for thick steel ship plate. In general, plasma cutting speed is faster than gas cutting speed. However, It is known that quality of plasma cu...
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Article
Silicon nanodot arrays patterned using diblock copolymer templates
Dense and periodic arrays of holes and Si nano dots were fabricated on silicon substrate. The holes were approximately 20–40 nm wide, 40 nm deep and 40–80 nm apart. To obtain nano-size patterns, self-assemblin...
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Chapter and Conference Paper
SOA-Based Next Generation OSS Architecture
In convergence telecommunication environment, Business Agility plays very important role in the OSS(Operation Support System) when telco provide new merged services to customer on time. But, the OSS also becom...
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Article
Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation
A significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the...
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Article
Growth of triangular shaped InGaAs/GaAs quantum wire structures
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Article
Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases
Non-ozone layer destructive chlorofluorocarbon (CFC) alternatives have been initially used for laser-induced thermochemical etching of GaAs. The CFC alternatives used here are CHClF2 and C2H2F4. Respective etchin...
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Article
Electrical characteristics of carbon-doped GaAs
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Article
Equilibrium-State Density Profiles of Centrifuged Cakes of Flocculated Suspensions
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Article
Consolidation of collodal suspensions
A key step in the processing of ceramics is the consolidation of powders into engineered shapes. Colloidal processing uses solvents (usually water) and dispersants to break up powder agglomerates in suspension...
