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  1. No Access

    Article

    Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N2 ambient

    We have investigated the growth of quaternary In1−xGaxAsyP1−y/InP materials using TBA and TBP in a N2 ambient. This process improves significantly the uniformity of In1−xGaxAs/InP QWs whereas it does not improve ...

    D. Keiper, R. Westphalen, G. Landgren in Journal of Electronic Materials (2000)

  2. No Access

    Article

    Diffusion of Phosphorus in Strained Si/SiGe/Si Heterostructures

    Phosphorus diffusion in a biaxially compressed Si0.87Ge0.13 film has been investigated in the temperature range of 810–900°C. A significant enhancement of the P diffusion in the biaxially compressed Si0.87Ge0.13 ...

    A. Yu. Kuznetsov, J. S. Christensen, M. K. Linnarsson… in MRS Online Proceedings Library (1999)

  3. No Access

    Article

    Temporally resolved selective regrowth of InP around [110] and [-110] mesas

    Temporally resolved selective regrowth of InP around reactive ion etched [110] and [-110] directional mesas is studied by hydride vapor phase epitaxy at the growth temperatures of 600, 650, 685, and 700°C. The...

    S. Lourdudoss, E. Rodríguez Messmer, O. Kjebon… in Journal of Electronic Materials (1996)

  4. No Access

    Chapter

    Electron Transport in InGaAsP/InP Quantum Well Laser Structures

    Carrier transport in quantum well (QW) lasers is one of the factors affecting the high frequency performance of these devices. Usually the transport of holes is assumed to be of major significance. However, if...

    S. Marcinkevičius, U. Olin, C. Silfvenius, B. Stålnacke… in Hot Carriers in Semiconductors (1996)

  5. No Access

    Chapter

    Carrier Transport in Multiple Quantum Well Region of InGaAsP/InP Structures

    After injection by a current pulse, initial carrier distribution between the quantum wells (QW) of a multiple QW laser is highly nonuniform1. For a laser to operate effectively, it is desirable that all the QWs e...

    S. Marcinkevicius, N. Tessler, U. Olin… in Ultrafast Processes in Spectroscopy (1996)

  6. No Access

    Article

    Photoreflectance Characterization of InGaAs Lattice Matched to InP

    We measured photoreflectance (PR) spectra at different temperatures between 80 and 300 K, and optical absorption (OA) at 3 K on MOVPE grown In1-xGaxAs nearly lattice-matched to InP. x-ray diffraction measurements...

    V. Bellani, M. Amiotti, M. Geddo, G. Guizzetti… in MRS Online Proceedings Library (1993)

  7. No Access

    Article

    The role of outdiffusion in the activation of high dose Mg implantations in InP

    We have studied the annealing behaviour of magnesium implanted in indium phosphide. The activated fraction of dopants was found to depend strongly on implanted dose and substrate temperature during implantatio...

    W. H. Van Berlo, M. Ghaffari, G. Landgren in Journal of Electronic Materials (1992)

  8. No Access

    Article

    Optimal growth interrupts for very high quality InGaAs(P)/InP superlattices grown by MOVPE

    The effects of different growth interrupt schemes at the compositional interfaces in 30 period InGaAs(P)/InP superlattices grown by metal-organic vapor phase epitaxy have been studied for quarternary compositi...

    G. Landgren, J. Wallin, S. Pellegrino in Journal of Electronic Materials (1992)

  9. No Access

    Article

    Abruptp- type do** transitions using bis-(cyclopentadienyl)-magnesium in metal-organic vapor phase epitaxy of GaAs

    Extremely abrupt p+-n do** transitions have been realized in GaAs and AlGaAs grown by metal-organic vapor phase epitaxy using bis-(cyclopentadienyl)-magnesium (Cp2Mg) as precursor for the Mg p-dopant. The Mg in...

    M. Rask, G. Landgren, S. G. Andersson, Å. Lundberg in Journal of Electronic Materials (1988)

  10. No Access

    Article

    The Chemisorption of Fluorine on Silicon (111) Surfaces

    High-resolution, soft x-ray photoemission investigations of fluorine chemisorption on silicon (111) surfaces are reported. The distribution of fluorosilyl moieties was found to be strongly dependent upon the s...

    F. R. McFeely, J. Morar, N. D. Shinn, G. Landgren… in MRS Online Proceedings Library (1983)