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Electron Transport in InGaAsP/InP Quantum Well Laser Structures

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Hot Carriers in Semiconductors

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Abstract

Carrier transport in quantum well (QW) lasers is one of the factors affecting the high frequency performance of these devices. Usually the transport of holes is assumed to be of major significance. However, if the active region of a laser is shifted towards the p contact of the device,1 or this region is p-doped,2 the electron transport may become an important factor.

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References

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Author information

Authors and Affiliations

  1. Royal Institute of Technology, Department of Physics II, S-100 44, Stockholm, Sweden

    S. Marcinkevičius

  2. Institute of Optical Research, S-100 44, Stockholm, Sweden

    U. Olin

  3. Semiconductor Laboratory, Royal Institute of Technology, Electrum 229, S-164 40, Kista, Sweden

    C. Silfvenius, B. Stålnacke, J. Wallin & G. Landgren

Authors
  1. S. Marcinkevičius
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  2. U. Olin
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  3. C. Silfvenius
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  4. B. Stålnacke
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  5. J. Wallin
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  6. G. Landgren
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Editor information

Editors and Affiliations

  1. University of Illinois at Urbana — Champaign, Urbana, Illinois, USA

    Karl Hess , Jean-Pierre Leburton  & Umberto Ravaioli ,  & 

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© 1996 Plenum Press, New York

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Marcinkevičius, S., Olin, U., Silfvenius, C., Stålnacke, B., Wallin, J., Landgren, G. (1996). Electron Transport in InGaAsP/InP Quantum Well Laser Structures. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_131

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  • DOI: https://doi.org/10.1007/978-1-4613-0401-2_131

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-8035-1

  • Online ISBN: 978-1-4613-0401-2

  • eBook Packages: Springer Book Archive

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