9 Result(s)

Article

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO _x /Pt RRAM device

The total ionizing dose (TID) effects of ⁶⁰Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO _x /Pt were studied. The resistance...

Fang Yuan, Zhigang Zhang, Jer-Chyi Wang, Liyang Pan, Jun Xu… in Nanoscale Research Letters (2014)

Article

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO _x interface

Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10⁵ cycles, and good data retention of >10⁴ s with a good resistance ratio of >10² ...

Amit Prakash, Siddheswar Maikap, Hsien-Chin Chiu… in Nanoscale Research Letters (2014)

Article

Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

Amit Prakash, Siddheswar Maikap, Hsien-Chin Chiu… in Nanoscale Research Letters (2013)

Article

Impact of electrically formed interfacial layer and improved memory characteristics of IrO_x/high-κ_x/W structures containing AlO_x, GdO_x, HfO_x, and TaO_x switching materials

Improved switching characteristics were obtained from high-κ oxides AlO_x, GdO_x, HfO_x, and TaO_x in IrO_x/high-κ_x/W structures because of a layer that formed at the IrO_x/high-κ_x interface under external positive bia...

Amit Prakash, Siddheswar Maikap, Writam Banerjee… in Nanoscale Research Letters (2013)

Article

RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO_x interface

Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10⁵ cycles, and good data retention of >10⁴ s with a good resistance ratio of >10² ...

Amit Prakash, Siddheswar Maikap, Hsien-Chin Chiu… in Nanoscale Research Letters (2013)

Article

Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge_0.5Se_0.5 solid electrolyte

We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge_0.5Se_0.5/W, as compared with Al/Cu/Ge_0.2Se_0.8/W structures, including stable AC endurance (>10⁵ cycles), ...

Sheikh Ziaur Rahaman, Siddheswar Maikap, Atanu Das… in Nanoscale Research Letters (2012)

Article

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrO_x nano-dots

Improved resistive switching memory characteristics by controlling the formation polarity in an IrO_x/Al₂O₃/IrO_x-ND/Al₂O₃/WO_x/W structure have been investigated. High density of 1 × 10¹³/cm² and small size of 1.3 ...

Writam Banerjee, Siddheswar Maikap, Chao-Sung Lai… in Nanoscale Research Letters (2012)

Article

Immobilization of enzyme and antibody on ALD-HfO₂-EIS structure by NH₃ plasma treatment

Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH₃ plasma treatmen...

I-Shun Wang, Yi-Ting Lin, Chi-Hsien Huang, Tseng-Fu Lu… in Nanoscale Research Letters (2012)