-
Article
Oriented lateral growth of two-dimensional materials on c-plane sapphire
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) represent the ultimate thickness for scaling down channel materials. They provide a tantalizing solution to push the limit of semicon...
-
Article
Open AccessTotal ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device
The total ionizing dose (TID) effects of 60Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO x /Pt were studied. The resistance...
-
Article
Open AccessEnhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 ...
-
Article
Open AccessRetraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
-
Article
Open AccessImpact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials
Improved switching characteristics were obtained from high-κ oxides AlOx, GdOx, HfOx, and TaOx in IrOx/high-κx/W structures because of a layer that formed at the IrOx/high-κx interface under external positive bia...
-
Article
Open AccessRETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 ...
-
Article
Open AccessEnhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte
We demonstrate enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge0.5Se0.5/W, as compared with Al/Cu/Ge0.2Se0.8/W structures, including stable AC endurance (>105 cycles), ...
-
Article
Open AccessFormation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
Improved resistive switching memory characteristics by controlling the formation polarity in an IrOx/Al2O3/IrOx-ND/Al2O3/WOx/W structure have been investigated. High density of 1 × 1013/cm2 and small size of 1.3 ...
-
Article
Open AccessImmobilization of enzyme and antibody on ALD-HfO2-EIS structure by NH3 plasma treatment
Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH3 plasma treatmen...
-
Article
Low Temperature (850 °C) Two-Step N2O Annealed Thin Gate Oxides
The electrical characteristics of thin gate dielectrics prepared by low temperature (850 'C) two-step N2O nitridation (LTN) process are presented. The gate oxides were grown by wet oxidation at 800 °C and then an...