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  1. No Access

    Article

    First Stages of Internal Oxidation in Ag-0.29 and 2.89 at. % Mg Single-Crystal Alloys

    Internal oxidation of Ag-0.29 and 2.89 at.% Mg alloys was studied by in-situ X-ray measurements at 300°C. The kinetics and lattice-parameter changes as a function of time are discussed in terms of the formatio...

    L. Charrin, P. Gergaud, G. Gonzalez, A. Mazuelas, A. Charaï in Oxidation of Metals (2006)

  2. No Access

    Article

    X-ray investigation of strain-compensated GaAs: C/AlAs: C distributed Bragg reflectors

    X-ray diffraction techniques are used to investigate the strain compensation in GaAs: C/AlAs: C distributed Bragg reflectors (DBR) grown by solid-source molecular beam epitaxy. The strain compensation is achie...

    A. Mazuelas, R. Hey, B. Jenichen, H. T. Grahn in Il Nuovo Cimento D (1997)

  3. No Access

    Article

    Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth

    Carbon-doped GaAs with dopant concentrations up to about 1020 cm−3 has been grown by molecular beam epitaxy. Above a critical carbon concentration, which depends on the deposition parameters, the surface deterior...

    H. Nörenberg, A. Mazuelas, K. Hagenstein, R. Hey, H. T. Grahn in Applied Physics A (1996)

  4. No Access

    Article

    Determination of the Bonding Configurations of Carbon Acceptors in InxGa1−xAs and AlxGa1−xAs

    The local environments of CAs acceptors in InxGa1−xAs and AlxGa1−xAs have been determined from the localized vibrational modes (LVMs) of both isolated CAs impurities and H-CAs pairs using infrared (IR) absorption...

    R. E. Pritchard, R. C. Newman, J. Wagner, M. Maier… in MRS Online Proceedings Library (1995)

  5. No Access

    Article

    Does the 1.25 eV Luminescence of Coherently Strained InGaAs Insertions in GaAs Originate from Quantum Dots?

    We study the growth of InAs/AlxGa1−xAs/GaAs heterostructures as well as their structural and optical properties. Structurally coherent InAs islands with a narrow size distribution are found to be formed only in a...

    J.-L. Lazzari, R. Klann, A. Mazuelas, A. Trampert… in MRS Online Proceedings Library (1995)

  6. No Access

    Article

    Growth and characterization of ultrathin GaP layer in a GaAs matrix by X-ray interference effect

    An ultrathin two monolayers thick layer of GaP sandwiched within a GaAs matrix was grown by atomic layer molecular beam epitaxy (ALMBE). The X-ray interference effect (Pendellösung) was used to determine the s...

    A. Mazuelas, L. Tapfer, A. Ruiz, F. Briones, K. Ploog in Applied Physics A (1992)

  7. No Access

    Article

    X-Ray Diffraction Determination of Critical Thickness of InAs and InP on GaAs Grown by Atomic Layer Molecular Beam Epitaxy

    Two series of samples consisting in a strained layer of InAs (InP) of different thickness, InAs N monolayers (ML) with N=1,2,3, and 4, and, InP M ML with M=2,3,4,5,6 and 7, covered by a GaAs cap layer of 200 n...

    A. Mazuelas, L. Gonzalez, L. Tapfer, F. Briones in MRS Online Proceedings Library (1992)

  8. No Access

    Article

    Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si

    In-depth stress distribution GaAs layers grown by Molecular Beam Epitaxy (MBE) on Si (001) has been studied by X-ray diffraction, photoluminescence and Raman spectroscopy. In order to determine the stress stat...

    Y. González, A. Mazuelas, M. Recio, L. González, G. Armelles… in Applied Physics A (1991)

  9. No Access

    Article

    Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates

    InAs layers with thickness ranging from 0.1 to 2.5 μm have been grown directly on highly mismatched (7.4%) (001) GaAs substrates by atomic layer molecular beam epitaxy (ALMBE). This growth method, based on the...

    A. Ruiz, L. González, A. Mazuelas, F. Briones in Applied Physics A (1989)