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  1. No Access

    Article

    Determination of the Bonding Configurations of Carbon Acceptors in InxGa1−xAs and AlxGa1−xAs

    The local environments of CAs acceptors in InxGa1−xAs and AlxGa1−xAs have been determined from the localized vibrational modes (LVMs) of both isolated CAs impurities and H-CAs pairs using infrared (IR) absorption...

    R. E. Pritchard, R. C. Newman, J. Wagner, M. Maier… in MRS Online Proceedings Library (1995)

  2. No Access

    Article

    Native Defects in Low Temperature GaAs and the Effect of Hydrogenation

    GaAs grown at low temperatures by MBE has been doped with shallow impurities to ∼1019 cm−3. A layer doped with Be acceptors was completely compensated and the simultaneous detection of AsGa0 and AsGa+ confirmed t...

    R. E. Pritchard, S. A. McQuaid, R. C. Newman, J. MÊkinen… in MRS Online Proceedings Library (1995)

  3. No Access

    Article

    Hydrogen Passivated Carbon Acceptors in GaAs and AlAs: No Evidence for Carbon Donors

    GaAs and AlAs layers grown by CBE and doped with either 12C or 13C have been passivated with hydrogen or deuterium. Infrared absorption lines due to hydrogen stretch modes, symmetric A1 modes and “carbon-like” E ...

    B. R. Davidson, R. C. Newman, R. E. Pritchard… in MRS Online Proceedings Library (1993)

  4. No Access

    Article

    Sequential gradient-restoration algorithm for optimal control problems

    This paper considers the problem of minimizing a functionalI which depends on the statex(t), the controlu(t), and the parameter π. Here,I is a scalar,x ann-vector,u anm-vector, and π ap-vector. At the initial poi...

    A. Miele, R. E. Pritchard, J. N. Damoulakis in Journal of Optimization Theory and Applica… (1970)

  5. No Access

    Article

    Book review

    R. E. Pritchard in Journal of Optimization Theory and Applications (1969)