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    Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth

    Carbon-doped GaAs with dopant concentrations up to about 1020 cm−3 has been grown by molecular beam epitaxy. Above a critical carbon concentration, which depends on the deposition parameters, the surface deterior...

    H. Nörenberg, A. Mazuelas, K. Hagenstein, R. Hey, H. T. Grahn in Applied Physics A (1996)