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6 Result(s)

within A. L. Gurskii Remove this filter Solid State Physics Remove this filter

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  1. No Access

    Article

    MOVPE of ZnMgSSe heterostructures for optically pumped blue-green lasers

    We report on the growth of ZnMgSSe/ZnSSe/ZnSe heterostructures in a low pressure metalorganic vapor phase epitaxy (MOVPE) system at 400 hPa and a growth temperature of 330°C. The precursor combination was dime...

    H. Kalisch, H. Hamadeh, J. Müller, G. P. Yablonskii… in Journal of Electronic Materials (1997)

  2. No Access

    Article

    Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

    Photoluminescence (PL) and reflection spectra of undoped and Mg-doped GaN single layers grown on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) were investigated in a wide range of temperature...

    G. P. Yablonskii, A. L. Gurskii, E. V. Lutsenko… in Journal of Electronic Materials (1998)

  3. No Access

    Article

    Structure of the free exciton luminescence band of heteroepitaxial ZnSe/GaAs layers

    The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 µm are investigated in the temperature range 10–120 K. It is shown that one of the causes of the form...

    Yu. P. Rakovich, A. L. Gurskii, A. S. Smal’… in Physics of the Solid State (1998)

  4. No Access

    Article

    Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy

    The reconstruction of the bound excitonic spectra of MOVPE-grown ZnSe:N samples caused by thermal annealing was observed. The results of the low temperature photoluminescence, reflection and SIMS measurements ...

    A. L. Gurskii, H. Hamadeh, H. Körfer, G. P. Yablonskii… in Journal of Electronic Materials (2000)

  5. No Access

    Chapter and Conference Paper

    Stimulated Emission and Gain in GaN Epilayers Grown on Si

    Optical and lasing properties of GaN/Si and GaN/Si/SiO/Si structures with a strain reducing AlGaN/AlN layer stack were investigated in a wide range of optical excitation densities and within a temperature inte...

    A. L. Gurskii, E. V. Lutsenko… in UV Solid-State Light Emitters and Detectors (2004)

  6. No Access

    Chapter and Conference Paper

    Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures

    Optically pumped lasing in GaN epitaxial layers and InGaN single, multiple and electroluminescence-test quantum well heterostructures grown on sapphire and silicon substrates are investigated as functions of t...

    G. P. Yablonskii, A. L. Gurskii… in UV Solid-State Light Emitters and Detectors (2004)