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Chapter and Conference Paper
Stimulated Emission and Gain in GaN Epilayers Grown on Si
Optical and lasing properties of GaN/Si and GaN/Si/SiO/Si structures with a strain reducing AlGaN/AlN layer stack were investigated in a wide range of optical excitation densities and within a temperature inte...
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Chapter and Conference Paper
Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures
Optically pumped lasing in GaN epitaxial layers and InGaN single, multiple and electroluminescence-test quantum well heterostructures grown on sapphire and silicon substrates are investigated as functions of t...
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Article
Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy
The reconstruction of the bound excitonic spectra of MOVPE-grown ZnSe:N samples caused by thermal annealing was observed. The results of the low temperature photoluminescence, reflection and SIMS measurements ...
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Article
Structure of the free exciton luminescence band of heteroepitaxial ZnSe/GaAs layers
The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 µm are investigated in the temperature range 10–120 K. It is shown that one of the causes of the form...
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Article
Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy
Photoluminescence (PL) and reflection spectra of undoped and Mg-doped GaN single layers grown on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) were investigated in a wide range of temperature...
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Article
MOVPE of ZnMgSSe heterostructures for optically pumped blue-green lasers
We report on the growth of ZnMgSSe/ZnSSe/ZnSe heterostructures in a low pressure metalorganic vapor phase epitaxy (MOVPE) system at 400 hPa and a growth temperature of 330°C. The precursor combination was dime...