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    Chapter and Conference Paper

    Stimulated Emission and Gain in GaN Epilayers Grown on Si

    Optical and lasing properties of GaN/Si and GaN/Si/SiO/Si structures with a strain reducing AlGaN/AlN layer stack were investigated in a wide range of optical excitation densities and within a temperature inte...

    A. L. Gurskii, E. V. Lutsenko in UV Solid-State Light Emitters and Detectors (2004)

  2. No Access

    Chapter and Conference Paper

    Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures

    Optically pumped lasing in GaN epitaxial layers and InGaN single, multiple and electroluminescence-test quantum well heterostructures grown on sapphire and silicon substrates are investigated as functions of t...

    G. P. Yablonskii, A. L. Gurskii in UV Solid-State Light Emitters and Detectors (2004)

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    Article

    Structure of the free exciton luminescence band of heteroepitaxial ZnSe/GaAs layers

    The exciton reflectance and photoluminescence spectra of epitaxial ZnSe/GaAs layers with a thickness of 2–4 µm are investigated in the temperature range 10–120 K. It is shown that one of the causes of the form...

    Yu. P. Rakovich, A. L. Gurskii, A. S. Smal’ in Physics of the Solid State (1998)