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  1. No Access

    Article

    Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy

    The reconstruction of the bound excitonic spectra of MOVPE-grown ZnSe:N samples caused by thermal annealing was observed. The results of the low temperature photoluminescence, reflection and SIMS measurements ...

    A. L. Gurskii, H. Hamadeh, H. Körfer, G. P. Yablonskii in Journal of Electronic Materials (2000)

  2. No Access

    Article

    Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

    Photoluminescence (PL) and reflection spectra of undoped and Mg-doped GaN single layers grown on sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) were investigated in a wide range of temperature...

    G. P. Yablonskii, A. L. Gurskii, E. V. Lutsenko in Journal of Electronic Materials (1998)

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    Article

    MOVPE of ZnMgSSe heterostructures for optically pumped blue-green lasers

    We report on the growth of ZnMgSSe/ZnSSe/ZnSe heterostructures in a low pressure metalorganic vapor phase epitaxy (MOVPE) system at 400 hPa and a growth temperature of 330°C. The precursor combination was dime...

    H. Kalisch, H. Hamadeh, J. Müller, G. P. Yablonskii in Journal of Electronic Materials (1997)