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    Chapter and Conference Paper

    Stimulated Emission and Gain in GaN Epilayers Grown on Si

    Optical and lasing properties of GaN/Si and GaN/Si/SiO/Si structures with a strain reducing AlGaN/AlN layer stack were investigated in a wide range of optical excitation densities and within a temperature inte...

    A. L. Gurskii, E. V. Lutsenko in UV Solid-State Light Emitters and Detectors (2004)

  2. No Access

    Chapter and Conference Paper

    Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O3 and InGaN/GaN/Si Heterostructures

    Optically pumped lasing in GaN epitaxial layers and InGaN single, multiple and electroluminescence-test quantum well heterostructures grown on sapphire and silicon substrates are investigated as functions of t...

    G. P. Yablonskii, A. L. Gurskii in UV Solid-State Light Emitters and Detectors (2004)