Search
Search Results
-
The Electrical Characteristics of 1200 V Trench Gate MOSFET Based on SiC
This research was carried out experiments with changing processes and design parameters to optimally design a SiC-based 1200 V power MOSFET, and...
-
Hot carrier reliability assessment of vacuum gate dielectric trench MOSFET (TG-VacuFET)
The manuscript proposes a Vacuum Gate Dielectric Trench MOSFET (TG-VacuFET) to attribute the reliability performances in hot-carrier and radiation...
-
A Vertical GaN Split Gate Trench MOSFET Device with Reduced Switching Energy Losses
In this work, the switching characteristics of vertical GaN split-gate trench MOSFET (SGT-MOSFET) have been evaluated using TCAD mixed-mode...
-
Performance Assessment of a New Radiation Microsensor Based 4H-SiC trench MOSFET: A Simulation Study
The MOSFET has been widely used as a detector for high-energy radiations in areas like nuclear energy and medical treatments. Generally, the shift in...
-
A Charge Plasma Based Dual Buried Gates Power MOSFET with Improved Figure of Merits
In this work, we design and simulate a high performance electrostatically doped dual buried gates power MOSFET (EDDBGP-MOS) structure. The novelty...
-
High rectification efficiency direct bandgap GePb quantum well trench N-MOSFET for 2.45G weak energy microwave wireless transmission
RF-DC rectifier circuit is a key component of microwave wireless energy transmission system (MWPT), and the performance of its core rectifier...
-
Small-Signal Modeling of GaN-BTG MOSFET for Wireless Applications
This work presents, the modeling of small signal parameters for Gallium Nitride (GaN) based Buffered Trench Gate (BTG) MOSFET for wireless...
-
4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars
A novel structure of a silicon carbide (SiC) double-trench metal oxide semiconductor field-effect transistor (DTMOSFET) is proposed using a hafnium...
-
Noise immune dielectric modulated dual trench transparent gate engineered MOSFET as a label free biosensor: proposal and investigation
We propose and investigate a biosensor based on a transparent dielectric-modulated dual-trench gate-engineered metal–oxide–semiconductor field-effect...
-
A Novel Dual Metal Double Gate Grooved Trench MOS Transistor: Proposal and Investigation
Through this paper, we have propounded and investigated a novel structure of a grooved trench MOS transistor with double gate architecture using TCAD...
-
Vertical GaN Reverse Trench-Gate Power MOSFET and DC-DC Converter
A vertical GaN reverse trench-gate power MOSFET (RT-MOSFET) device is proposed. This Vertical RT-MOSFET features the negative incline of...
-
Implementation of Low Voltage MOSFET and Power LDMOS on InGaAs
In this paper, a new low voltage MOSFET (LV MOSFET) and high voltage dual-gate MOSFET (HV DG MOSFET) have been proposed with concept of integration...
-
A Modulation Electric Field Technique to Improve the LD-MOSFET Performance with a P-type Ga2O3 Pocket
This study presents a modulation technique of electric field to improve the electrical performances of silicon-on-insulator (SOI) laterally diffused...
-
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of...
-
Reliability of Sub-20 nm Black Phosphorus Trench (BP-T) MOSFET in High-Temperature Harsh Environment
In this work, the high-temperature reliability of the Black Phosphorus Trench (BP-T) MOSFET device has been analyzed. When the temperature is very...
-
Impact of Deep Cryogenic Temperatures on High-k Stacked Dual Gate Junctionless MOSFET Performance: Analog and RF analysis
This article presents the reliability analysis of a High- k stacked Dual Gate Junction-less MOSFET at Deep Cryogenic Temperatures (as low as 50...
-
Analytical Subthreshold Model of Electrical Field-Effect for the Capacitance in Cylindrical Surrounding Double-Gate MOSFET Paradigm
A novel extensive subthreshold model of Cylindrical Surrounding Double-Gate (CSDG) MOSFET with gate-bias voltage and source/drain drops using the...
-
Effect of High-Low Do** Profile on Threshold Voltage Shift of Submicron Double-Gate MOSFET
Threshold voltage shift as a function of channel length for shallow implanted do** in source region is analytically investigated for double-gate...
-
Impact of Dual Material Gate Design and Retrograde Channel Do** on β-Ga2O3 MOSFET for High Power and RF Applications
In the present work, dual material gate design and retrograde do** has been implemented on lateral β-Ga 2 O 3 MOSFET with the aim to improve Power...