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The Electrical Characteristics of 1200 V Trench Gate MOSFET Based on SiC

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Abstract

This research was carried out experiments with changing processes and design parameters to optimally design a SiC-based 1200 V power MOSFET, and then, essential electrical characteristics were derived. In order to secure the excellence of the trench gate type SiC power MOSFET device to be designed, electrical characteristics were derived by designing it under conditions such as planner gate SiC power MOSFET, and it was compared with the trench gate type SiC power MOSFET device. As a result of the comparative analysis, the on-resistance while maintaining the yield voltage was 1840 m, for planner gate power MOSFET and to 40 m for trench gate power MOSFET, respectively, indicating characteristics more than 40 times better. It was judged that excellent results were derived because the temperature resistance directly affects energy efficiency. It is predicted that the devices optimized through this experiment can sufficiently replace the IGBT devices generally used in 1200 V class, and that since the SiC devices are wide band gap devices, they will be widely used to apply semiconductors for vehicles using devices with excellent thermal characteristics.

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Acknowledgements

This work was supported by the 2022 Far East University Research Grant (FEU2022S03).

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Authors and Affiliations

  1. Department of Energy IT Engineering, Far East University, Eumseong-gun, 27739, Chungcheongbuk-Do, Korea

    Ey Goo Kang

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  1. Ey Goo Kang
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Correspondence to Ey Goo Kang.

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We can declare that we have no interest with other research group and commercial company groups. And This research was supported by Far East University Grant (FEU2022S03). This manuscript has originality and did not submitted elsewhere.

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Kang, E.G. The Electrical Characteristics of 1200 V Trench Gate MOSFET Based on SiC. Trans. Electr. Electron. Mater. 24, 330–335 (2023). https://doi.org/10.1007/s42341-023-00451-x

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  • DOI: https://doi.org/10.1007/s42341-023-00451-x

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