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PT Symmetry and Radiation Structure of High-Power Laser Diodes
AbstractPossible conditions are considered for using the quantum formalism of PT symmetry when solving wave equations in systems with a...
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Coherence of Radiation and Spectral–Spatial Characteristics of High-Power Laser Diodes
AbstractPhysical mechanisms are considered that could affect the radiation length of coherence of high-power laser diodes during their slow...
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High-Power Source of Narrow-Band Radiation Based on Integrated External-Cavity Laser Diodes
Abstract—A narrow-band source of 779-nm radiation with a total power above 35 W and a spectral width of no more than 0.1 nm has been obtained by...
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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence
AbstractThe effect of the active region design on the vertical far-field divergence is studied for high-power laser diodes based on asymmetric...
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High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/GaAs Heterostructures with Low Internal Optical Loss
AbstractThe main results of the studies on designing high-power semiconductor laser diodes based on asymmetric semiconductor heterostructures...
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AlGaN-Based Deep-Ultraviolet Laser Diodes with Novel Superlattice Electron-Blocking Layers
Based on the specificity of AlGaN-based deep-ultraviolet laser diodes (DUV-LDs), we design a laser with a novel superlattice (SL) electron-blocking...
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Experimental and theoretical investigations on the modulation capabilities of a sample of vertical cavity surface emitting laser diodes for atomic vapour applications
This paper discusses various frequency modulation and intensity modulation capabilities within a sample of direct laser current modulated identical...
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Optimization of Cavity Parameters of High-Power InGaAs/AlGaAs/GaAs Laser Diodes (λ = 1060 nm) for Efficient Operation at Ultrahigh Pulsed Pump Currents
AbstractUsing the developed 2D numerical model of laser diodes, we study the effect of the cavity characteristics on the loss, and analyze the choice...
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Doped Effects of Quaternary AlInGaN Last Quantum Barrier for Deep-Ultraviolet Laser Diodes Without Electron Blocking Layer
In this work, we investigate the performance of doped quaternary AlInGaN last quantum barrier (LQB) of deep-ultraviolet laser diodes (DUV LDs)...
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Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs Heterostructure with a Bulk Active Region for Generating High-Power Subnanosecond Optical Pulses
AbstractLaser diodes based on an asymmetric heterostructure AlGaAs/GaAs with a bulk active region, optimized for generating high-power subnanosecond...
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AlGaN-Based Deep-Ultraviolet Laser Diodes with Quaternary AlInGaN Last Quantum Barrier
We propose the quaternary AlInGaN last quantum barrier (LQB) structure to improve the performance of deep-ultraviolet (DUV) laser diodes (LDs). Here,...
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AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers
An electron blocking layer (EBL) is often utilized in the p -type region of AlGaN-based deep ultraviolet laser diodes (DUV LDs) to control electron...
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Improving the Performance of AlGaN-Based Deep Ultraviolet Laser Diodes Using a Convex Waveguide Layer
There exists an extensive research interest in the performance improvement of AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs). Herein, to...
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The coupling study between multi-channel laser diodes and multimode fiber in a fiber pump laser
Fiber pump lasers are widely used in a variety of fields, such as optical fiber communication, national defense, and medical beauty due to their high...
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Methods for Switching Radiation Polarization in GaAs Laser Diodes
AbstractOperation modes of laser structures with controlled polarization of light have been studied and the results of measuring polarization...
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Fine and Rough Structures of the Frequency Spectrum of a High-Power Laser Diodes during Slow Degradation
AbstractIt is shown that fine and rough structures can be differentiated in the radiation spectrum of a powerful laser diode. The relationship...
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Electrically assisted amplified spontaneous emission in perovskite light-emitting diodes
Metal halide perovskites have emerged as promising gain materials for thin-film laser diodes. However, achieving electrically excited amplified...
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Light-Emitting Diodes Based on Upconversion Nanoparticles
The importance of using upconversion nanoparticles in the production of optoelectronic devices, especially light-emitting diodes, is very...
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Effects of the Stepped-Doped Lower Waveguide and a Doped p-Cladding Layer on AlGaN-Based Deep-Ultraviolet Laser Diodes
The performance of deep ultraviolet (DUV) laser diodes (LDs) may be affected by structural variations in the composition of AlGaN devices. In this...