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Optimization of Cavity Parameters of High-Power InGaAs/AlGaAs/GaAs Laser Diodes (λ = 1060 nm) for Efficient Operation at Ultrahigh Pulsed Pump Currents

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Abstract

Using the developed 2D numerical model of laser diodes, we study the effect of the cavity characteristics on the loss, and analyze the choice of the cavity parameters for efficient operation of the laser at ultrahigh pump currents. It is shown that at a fixed pump-current amplitude, a maximum output power is achieved for a combination of the optimal cavity parameters, namely, the cavity length Lopt and the output mirror reflectivity RARopt. It is found that the possibility of increasing the power by reducing the RAR coefficient is limited due to the formation of a local region of high optical loss and recombination loss currents near the cavity face with a high reflectivity.

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Funding

The work was supported by the Russian Science Foundation (project no. 19-79-30072).

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. O. Slipchenko, O. S. Soboleva, V. S. Golovin & N. A. Pikhtin

Authors
  1. S. O. Slipchenko
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  2. O. S. Soboleva
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  3. V. S. Golovin
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  4. N. A. Pikhtin
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Corresponding author

Correspondence to S. O. Slipchenko.

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The authors declare that they have no conflicts of interest.

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Translated by I. Uliktin

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Slipchenko, S.O., Soboleva, O.S., Golovin, V.S. et al. Optimization of Cavity Parameters of High-Power InGaAs/AlGaAs/GaAs Laser Diodes (λ = 1060 nm) for Efficient Operation at Ultrahigh Pulsed Pump Currents. Bull. Lebedev Phys. Inst. 50 (Suppl 5), S535–S546 (2023). https://doi.org/10.3103/S1068335623170153

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  • DOI: https://doi.org/10.3103/S1068335623170153

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