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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence

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Abstract

The effect of the active region design on the vertical far-field divergence is studied for high-power laser diodes based on asymmetric heterostructures with a 4-μm thick waveguide and active region designs based on single (SQW) and double (DQW) InGaAs quantum wells. It is shown that the number of quantum wells has a significant effect on the divergence determined by the angle with the 95% power content (Θ95%). For asymmetric heterostructures with an SQW active region, the beam divergence at the half-maximum level (FWHM) is 12.9°. It is experimentally shown that the transition from the SQW to the DQW design of the active region leads to an increase in the Θ95% value from 23.2° to 41.8°. For both types of structures, the internal optical loss and internal quantum efficiency are 0.27 cm‒1 and 99%, respectively. On the basis of asymmetric heterostructures with an active SQW region, we demonstrate high-power laser diodes emitting a CW power of 9 W at a temperature and pump current of 25°C/10 A and 55°C/11.4 A.

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Funding

The work was supported by the Russian Science Foundation (project no. 19-79-30072). Regarding the development of post-growth technology for the manufacture of laser diodes, research was supported by the State Task of the Ioffe Institute.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    S. O. Slipchenko, A. A. Podoskin, D. N. Nikolaev, V. V. Shamakhov, I. S. Shashkin, M. I. Kondratov, I. N. Gordeev, A. E. Grishin, A. E. Kazakova, P. S. Gavrina, K. V. Bakhvalov, P. S. Kop’ev & N. A. Pikhtin

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  1. S. O. Slipchenko
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  2. A. A. Podoskin
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  3. D. N. Nikolaev
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  4. V. V. Shamakhov
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  5. I. S. Shashkin
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  6. M. I. Kondratov
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  7. I. N. Gordeev
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  8. A. E. Grishin
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  9. A. E. Kazakova
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  10. P. S. Gavrina
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  11. K. V. Bakhvalov
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  12. P. S. Kop’ev
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  13. N. A. Pikhtin
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Corresponding author

Correspondence to S. O. Slipchenko.

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Translated by I. Ulitkin

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Slipchenko, S., Podoskin, A., Nikolaev, D. et al. High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence. Bull. Lebedev Phys. Inst. 50 (Suppl 9), S976–S983 (2023). https://doi.org/10.3103/S1068335623210091

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