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Electrical Conductive and Photoelectrical Properties of Heterostructures Based on Gallium and Chromium Oxides with Corundum Structure
Abstractα-Ga 2 O 3 /α-Cr 2 O 3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The...
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Hydrogen Influence on Electrical and Photoelectrical Properties of InP/Pd Thin-Film Structures Obtained by Sol-Gel Method
Abstractthe current-voltage characteristics and photoelectric properties of semiconductor structures containing Pd nanoparticles in thin films...
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Electrical properties of amorphous Cu doped InSe thin films
In this study, we employed thermal evaporation under vacuum conditions to introduce copper dopants into amorphous InSe thin films. Our objective was...
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Combined photothermal lens and photothermal mirror Z-scan of semiconductors
We perform thermal lens and thermal mirror Z-scan experiments to study the photothermal properties of semiconductors. We fix the sample’s position,...
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Cd- and Zn-Based Wide Band Gap II-VI Semiconductors
This chapter considers Cd- and Zn-based wide band gap II-VI compounds, which include ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe. The main structural... -
Photosensitive properties of Schottky type photodiodes prepared by spin coating of isoniazid Schiff base thin film on p-Si
In this study, a layer of isonicotinohydrazide and pyrene-based Schiff base (PyMIs) was formed on the front side of a p-Si semiconductor using the...
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Yttrium Doped α-Fe2O3 Nanorods for Enhanced Optoelectronic Properties and Increased Photocurrent Density
AbstractHematite (α-Fe 2 O 3 ) has received a lot of attention and has potential use in a variety of applications such as energy storage and...
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Promoting the optoelectronic and ferromagnetic properties of Cr2S3 nanosheets via Se do**
Do** can change the band structure of semiconductors, thereby affecting their electrical, optical, and magnetic properties. In this study, we...
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Ternary II-VI Alloys Promising for Application in Photodetectors
In this chapter, an overview of II-VI semiconductors, especially some important ternary II-VI alloys, CdZnTe, CdHgTe, and HgZnTe, is given with more... -
PbS QDs and rGO-decorated PbS QDs induced optical properties variations on P3HT:PC61BM composite thin films
PbS QDs and PbS QDs decorated with reduced graphene (rGO) are prepared by hot-injection method using PbO and hexamethyldisilathiane (HMDS) as Pb and...
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Electronic Properties
Electronic density-of-states in the extended and localized states govern optical and electrical properties. This chapter describes that studies upon... -
High-performance position-sensitive detector based on the lateral photoelectrical effect of two-dimensional materials
Two-dimensional (2D) materials such as graphene and transition-metal chalcogenides have been extensively studied because of their superior electronic...
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A Hydrogen Sensor Based on Pd/InP Structures
Тhe development of a photoelectrical hydrogen sensor without sensor element heating is presented. For the sensitive element of the hydrogen sensor...
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The impact of sulfur deficiency on the structural, optical and photoluminescence properties of Zn0.75Cd0.25S quantum dots
Zn 0.75 Cd 0.25 S x (x = 1, 0.9, 0.8, 0.7, 0.6, 0.5) quantum dots were produced via thermolysis method. The structure and microstructures behaviors of Zn 0.75...
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Effect of Oxygen and Water on Photocurrent Multiplication Rates
The influence of oxygen and water on photocurrent multiplication at organic/metal interfaces was observed ex-situ as well as in-situ within an... -
High-performance n – Si/p – SeO2 /p – SiO2 heterojunction photodetectors for potential application in visible light communication technology
Photodetectors suitable for visible light communication (VLC) technology were fabricated and characterized in this study. The photodetectors were...
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Nanowire-Based Photodetectors for Visible-UV Spectral Region
In recent decades, there has been great interest in the development of various devices based on 1D nanostructures, such as nanowires (NWs), nanotubes... -
Heterostructure of GeSe2−xSnx/n-Si solar cells: electronic properties and improvement of photoelectrical performance
Heterostructures of GeSe 2− x Sn x /n-Si (0 ≤ x ≤ 0.8) solar cells were made by vacuum deposition. Electronic and photoelectrical performances of these...
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Photoexcitation dynamics and energy engineering in supramolecular do** of organic conjugated molecules
Do** and blending strategies are crucial means to precisely control the excited states and energy level in conjugated molecular systems. However,...
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Analysis of electrical, optical, and structural behaviour of nanostructured CdS thin films for photosensing devices
CdS thin films were prepared sol–gel spin coating methodology. The prepared CdS thin films were annealed, and various characterizations were...