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Amorphous Chalcogenide Semiconductors and Related Materials

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Abstract

Electronic density-of-states in the extended and localized states govern optical and electrical properties. This chapter describes that studies upon electronic properties have rendered a lot of valuable ideas such as Tauc gap, mobility edge, and charged defects. In addition, we see that the concepts originally proposed for crystals as polaron and Urbach edge bear special importance in chalcogenide glasses. We also consider optical nonlinearity, which is conspicuous in the chalcogenide glass. Electrical conductions under dc and ac electric fields are also discussed. It is argued that the Meyer-Neldel rule poses inevitable problems for understanding the conduction mechanism in disordered materials. The final section refers to the composition dependence of the bandgap energy.

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Notes

  1. 1.

    The absorption with s = 2 appears also in the indirect transition in crystals, which suggests that static and vibrational disorders play similar roles (suppressing wavenumber effects) in the electronic excitation.

  2. 2.

    Thin bulk samples can be prepared also through squeezing (Brandes et al. 1970) and polishing (Hamanaka et al. 1977).

  3. 3.

    Moss adopts “95”, not “77”, in his newer publication (Moss 1985). He also suggests that “108” may be more appropriate.

  4. 4.

    Note I = 2E2/377 in vacuum, where I (W/m2) and E (V/m) are the light intensity and the electric field.

  5. 5.

    In contrast to Dc(T) ∝ T3/2 in an ideal crystalline semiconductor (Kittel 2005), it is difficult to explicitly write down DC(T) for disordered semiconductors. And, some researchers have adopted an expression DC(T) ∝ D(Ec)T1, where D(Ec) is the density-of-state with the unit of cm−3 eV−1 (Mott and Davis 1979, Elliott 1990). However, since the exact form for D(Ec) is unknown, we prefer the present expression (Shimakawa 2019).

  6. 6.

    To get a sense of the DOS effect, we may take an ultimate example; in an intrinsic crystalline semiconductor having no gap states, EF(T) ≈ EF(0), and accordingly γ ≈ 0, which would give infinite EMN and σ00 = σ0.

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  1. Faculty of Engineering, Hokkaido University, Sapporo, Japan

    Keiji Tanaka

  2. Faculty of Engineering, Gifu University, Gifu, Japan

    Koichi Shimakawa

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Tanaka, K., Shimakawa, K. (2021). Electronic Properties. In: Amorphous Chalcogenide Semiconductors and Related Materials. Springer, Cham. https://doi.org/10.1007/978-3-030-69598-9_4

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