Abstract
This chapter considers Cd- and Zn-based wide band gap II-VI compounds, which include ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe. The main structural parameters of the compounds are given, and the features of the synthesis of single crystals and nanocrystals of these compounds, as well as the features of thin films deposition are discussed. Chemical properties, the instability of parameters caused by oxidation and dissociation, the nature of the chemical bond, and the band diagram are also analyzed. The physical, electrophysical, catalytic, and surface properties of wide band gap II-VI compounds are given. It is shown that Cd- and Zn-based II-VI compounds, especially ZnS, do not have the pinning of surface Fermi level. The approaches used for their do** by donor and acceptor impurities are considered. A description is given of possible applications of Cd- and Zn-based II-VI compounds, which include various types of visible and UV photodetectors, phosphors, opto-thermal devices, light-emitting diodes and lasers, solar cells, gas sensors, various biosensors, X-ray, gamma, and neutron detectors.
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G.K. is grateful to the State Program of the Republic of Moldova (project 20.80009.5007.02) for supporting his research.
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Korotcenkov, G. (2023). Cd- and Zn-Based Wide Band Gap II-VI Semiconductors. In: Korotcenkov, G. (eds) Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors. Springer, Cham. https://doi.org/10.1007/978-3-031-19531-0_2
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