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Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application
Multi-level switching memristor devices are becoming a need of the hour to implement the synaptic behaviour for brain-inspired in-memory computing....
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The Structure of Semiconductors
The bonding forces and atomic sizes determine the arrangement of the atoms in equilibrium in crystals. The crystal structure is determined by the...
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Materials for Gamma Radiation Sensors
Sensors used for spectroscopic measurements of gamma radiation are most often scintillator or semiconductor materials. An overview is provided in...
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The Structure of Semiconductors
The bonding forces and atomic sizes determine the arrangement of the atoms in equilibrium in crystals. The crystal structure is determined by the...
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Polarization-Induced 2D Hole Gases in Undoped (In)GaN/AlN Heterostructures
P-type impurity do** of wide bandgap semiconductors like gallium nitride (GaN) is fundamentally challenging due to its deep valence bands, leading...
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Excitons
Optical band-to-band absorption can produce an electron and a hole in close proximity which attract each other via Coulomb interaction and can form a...
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Quantum-Dot Lasers
The reduction of the active region of semiconductor lasers to quasi-zero dimensions has different effects on static and dynamic laser parameters as...
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Excitons
Optical band-to-band absorption can produce an electron and a hole in close proximity which attract each other via Coulomb interaction and can form a...
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Electronic Properties of Heterostructures
This chapter presents electronic properties of a junction between two semiconductors and electronic states in low-dimensional structures. First, we...
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Heterostructure Electronic Devices
Compound semiconductors are excellent candidates for high-speed device applications due to their high electron mobilityMobility, the ability to form...
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The Structure of Semiconductors
The bonding forces and atomic sizes determine the arrangement of the atoms in equilibrium in crystals. The crystal structure is determined by the...
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Raman Spectroscopy
Deals with lattice vibrations studied by Raman spectroscopy. First, a description of the fundamentals of this technique is provided. Special emphasis...
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Amorphous Group III–V Semiconductors
Structural disorder is common to the amorphous Group IV and III–V semiconductors as manifested by an increase in bondlength and Debye-Waller factor...
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Growth and Electro-Magneto-Optics of Oxide Quantum Structures Based on ZnO
This chapter represents growth of ZnO quantum nanostructures controlled at nano scale and its electro-magneto-optical characteristics....
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Electronic Properties of Heterostructures
This chapter presents electronic properties of a junction between two semiconductors and electronic states in low-dimensional structures. First, we...
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Terahertz detectors and focal plane arrays
Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine,...
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Electro-Magneto-Optics in Polarity-Controlled Quantum Structures on ZnO
Studies have shown that Zinc oxide (ZnO) is a practical candidate for the development of practical devices such as...
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Mechanisms of current flow in metal-semiconductor ohmic contacts
Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field...
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Band Structure and High-pressure Measurements
Determination of the electronic energy vs momentum relationship in semiconductors is essential for the prediction of almost all of their properties....
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LED-Photodiode Opto-pairs
We have demonstrated that InAs-based narrow gap heterostructures exhibit a potential barrier at the p-n junction up to 300°C and are able to operate...