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Band alignment and polarization engineering in κ-Ga2O3/GaN ferroelectric heterojunction
Ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered...
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Effect of Contact Resistance on the High-Field Characteristics of MoS2 Transistors
Layered transition metal dichalcogenides (TMDs) display a wide range of unique electronic properties and are potentially important for electronic...
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Multi-Level Capacitive Memory Effect in Metal/Oxide/Floating-Schottky Junction
We experimentally demonstrate that metal/oxide/floating-Schottky junction has multiple effective capacitances depending on the amount of electrons...
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The Effects of Boron Passivation and Re-Oxidation on the Properties of the 4H-SiC/SiO2 Interface
We investigated the effect of boron passivation and re-oxidation on the properties of the silicon carbide/silicon dioxide interface....
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How to get high-efficiency lead chalcogenide quantum dot solar cells?
Lead chalcogenide colloidal quantum dots (CQDs) are regarded as attractive absorption materials for novel solar cells (SCs). The cost of lead...
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Trap Profiling an In-Ga-Zn-O Thin Film Transistor by Using a Transmission Line Model Incorporating the Conductance Method
The trap energy profile of top gate In-Ga-Zn-O (IGZO) thin film transistors was extracted successfully using a transmission line model incorporating...
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Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation
We investigated the distributions and the energy levels of defects in SiO 2 /AlGaN/GaN highelectron-mobility transistors (HEMTs) by using...
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Current Transport and 1/f Noise Characteristics in Ferromagnetic Permalloy/n-type Ge Schottky Contacts
The current transport mechanism in permalloy/ n -type Ge Schottky diodes was studied over the temperature range from 200 to 400 K. At temperatures...
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Effects of Structure and Sputtering Parameters on the Device Properties of Tin-Oxide Thin-Film Transistors
We investigated the device properties of sputter-deposited tin-oxide (SnO) thin-film transistors (TFTs) in which the SnO x active layers were...
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Effects of channel thickness on oxide thin film transistor with double-stacked channel layer
To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs...
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Analysis of Deep and Shallow Traps in Semi-Insulating CdZnTe
Trap levels which are deep or shallow play an important role in the electrical and the optical properties of a semiconductor; thus, a trap level...
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Electrical properties of HfO2/Al2O3 dielectrics fabricated on In0.53Ga0.47As by using atomic layer deposition at low temperatures (100 - 200 ◦C)
The electrical properties of HfO 2 /Al 2 O 3 stacked dielectrics on n -type In 0.53 Ga 0.47 As were investigated as a function of the atomic layer deposition...
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Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
We have developed a nitrogen-incorporated silicon oxide (SiO x N y ) deposition process using plasma enhanced atomic layer deposition (PEALD) for the...
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Changes in physical properties of graphene oxide with thermal reduction
Reduced graphene oxide (rGO) has attracted significant attention as an easily fabricable twodimensional material. Depending on the oxygen-containing...
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A study on N2O direct oxidation process with re-oxidation annealing for the improvement of interface properties in 4H-SiC MOS capacitor
The effect of N 2 O direct oxidation processes with re-oxidation on SiC/SiO 2 interface characteristics has been investigated. With different oxidation...
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A transistor based on 2D material and silicon junction
A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many...
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Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices
The resistive switching phenomena of HfO 2 films grown by using metal organic chemical vapor deposition (MOCVD) was studied for the application of...
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Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices
In this study, we proposed and demonstrated a self-rectifying property of a silicon nitride (Si 3 N 4 )-based resistive random access memory (RRAM)...
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Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si Schottky diodes
The electrical properties of Pt/n-type Si Schottky diodes fabricated from n-type Si wafers subjected to an oxygen (O 2 ) plasma treatment were...
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Maximum photon extraction from a single quantum dot embedded in a metal/dielectric-cladded cylindrical structure
Various geometries are investigated numerically to extract the maximum number of photons to the airside from a single quantum dot embedded in a...