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1. Epitaxial Growth of NiMnSb on GaAs by Molecular Beam Epitaxy

   The similarity in crystal structures allows for the epitaxial growth of the candidate half-metal NiMnSb on GaAs. We discuss the growth by molecular...

   Willem Van Roy, Marek Wójcik in Half-metallic Alloys

   Chapter
   

2. Epitaxy-Stabilized Structures

   Ultrathin films can be grown pseudomorphically on suitable substrates under certain growth conditions, even when the structure grown differs from the...

   Matthias Wuttig, **angdong Liu in Ultrathin Metal Films

   Chapter
   

3. Controlled epitaxy and patterned growth of one-dimensional crystals via surface treatment of two-dimensional templates

   Mixed-dimensional van der Waals (vdW) heterostructures offer promising platforms for exploring interesting phenomena and functionalities. To exploit...

   Myeong** Jang, Minseol Kim, ... Kwanpyo Kim in npj 2D Materials and Applications

   Article Open access 16 May 2024
   

4. Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

   Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be...

   Jongho Ji, Hoe-Min Kwak, ... Hyun S. Kum in Nano Convergence

   Article Open access 28 April 2023
   

5. Applications of remote epitaxy and van der Waals epitaxy

   Epitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations...

   Ilpyo Roh, Seok Hyeon Goh, ... Sang-Hoon Bae in Nano Convergence

   Article Open access 30 April 2023
   

6. Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy

   The droplet epitaxy of indium gallium nitride quantum dots (InGaN QDs), the formation of In–Ga alloy droplets in ultra-high vacuum and then surface...

   Nurzal Nurzal, Ting-Yu Hsu, ... Ing-Song Yu in Discover Nano

   Article Open access 07 April 2023
   

7. On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties

   Abstract

   In this study, for the first time, the influence of the III/V flux ratio on the structural and optical characteristics of InGaN nanowires...

   V. O. Gridchin, S. D. Komarov, ... G. E. Cirlin in Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

   Article 01 April 2024
   

8. Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates

   Remote epitaxy has opened novel opportunities for advanced manufacturing and heterogeneous integration of two-dimensional (2D) materials and...

   Xue**g Wang, Joonghoon Choi, ... Young Joon Hong in Nano Convergence

   Article Open access 30 August 2023
   

9. Growth, structure, and morphology of van der Waals epitaxy Cr_1+δTe₂ films

   The preparation of two-dimensional magnetic materials is a key process to their applications and the study of their structure and morphology plays an...

   **aodan Wang, Hua Zhou, ... Hui-Qiong Wang in Discover Nano

   Article Open access 24 February 2023
   

10. Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy

    Two-dimensional (2D) indium arsenide (InAs) is promising for future electronic and optoelectronic applications such as high-performance nanoscale...

    Jiuxiang Dai, Teng Yang, ... Lin Zhou in Nano Research

    Article 03 June 2022
    

11. Van der Waals epitaxy of tunable moirés enabled by alloying

    The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies....

    Matthieu Fortin-Deschênes, Kenji Watanabe, ... Fengnian **a in Nature Materials

    Article 14 August 2023
    

12. Materials Design and Molecular-Beam Epitaxy of Half-Metallic Zinc-Blende CrAs and the Heterostructures

    Zinc-blende half-metallic ferromagnets are promising materials in order to open up a new world of semiconductor spintronics. We design a new class of...

    Hiro Akinaga, Masaki Mizuguchi, ... Masafumi Shirai in Half-metallic Alloys

    Chapter
    

13. Trench-Filling Epitaxy of Germanium on (001) Silicon Enhanced Using [100]-Oriented Patterns

    This paper reports trench-filling epitaxy of Ge on (001) Si using [100]-oriented patterns, which is effective to fill the micron-deep trench in a...

    Kota Kato, Kazuki Motomura, ... Yasuhiko Ishikawa in Journal of Electronic Materials

    Article 08 March 2023
    

14. Thermogravimetric study of metal–organic precursors and their suitability for hybrid molecular beam epitaxy

    Although metal–organic (MO) precursors are widely used in technologically relevant deposition techniques, reports on their temperature-dependent...

    Benazir Fazlioglu-Yalcin, Maria Hilse, Roman Engel-Herbert in Journal of Materials Research

    Article Open access 20 December 2023
    

15. Wafer-scale epitaxy of transition-metal dichalcogenides with continuous single-crystallinity and engineered defect density

    Research on electronic channel materials has traditionally focused on bulk and nanocrystals, nanowires, and nanotubes. However, the recent surge of...

    Mariam Hakami, Chien-Chih Tseng, ... Jui-Han Fu in MRS Bulletin

    Article Open access 28 September 2023
    

16. Lattice modulation strategies for 2D material assisted epitaxial growth

    As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure...

    Qi Chen, Kailai Yang, ... Zhiqiang Liu in Nano Convergence

    Article Open access 25 August 2023
    

17. Understanding epitaxial growth of two-dimensional materials and their homostructures

    The exceptional physical properties of two-dimensional (2D) van der Waals (vdW) materials have been extensively researched, driving advances in...

    Can Liu, Tianyao Liu, ... Kaihui Liu in Nature Nanotechnology

    Article 10 July 2024
    

18. Hybrid molecular beam epitaxy of germanium-based oxides

    Germanium-based oxides such as rutile GeO ₂ are garnering attention owing to their wide band gaps and the prospects of ambipolar do** for...

    Fengdeng Liu, Tristan K. Truttmann, ... Bharat Jalan in Communications Materials

    Article Open access 04 October 2022
    

19. Infinite-Melt Vertical Liquid-Phase Epitaxy of HgCdTe from Hg Solution: from VLWIR to SWIR

    Liquid-phase epitaxy (LPE) is a material growth technology used in the fabrication of mercury cadmium telluride (HgCdTe) infrared (IR) detectors,...

    Mauro F. Vilela, Jack Hogan, ... Andreas Hampp in Journal of Electronic Materials

    Article 20 July 2022
    

20. Axiotaxy driven growth of belt-shaped InAs nanowires in molecular beam epitaxy

    In this study, we demonstrate the axiotaxy driven growth of belt-shaped InAs nanowires using Au catalysts by molecular beam epitaxy. It is found...

    Qiang Sun, Dong Pan, ... ** Zou in Nano Research

    Article 24 March 2021