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Epitaxial Growth of NiMnSb on GaAs by Molecular Beam Epitaxy

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Half-metallic Alloys

Part of the book series: Lecture Notes in Physics ((LNP,volume 676))

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Abstract

The similarity in crystal structures allows for the epitaxial growth of the candidate half-metal NiMnSb on GaAs. We discuss the growth by molecular beam epitaxy using individual sources for Ni, Mn, and Sb on GaAs(001), (111)A and (111)B substrates. We focus the discussion on the aspects that are crucial for obtaining highly polarized films suitable for spin injection into a semiconductor: control of the interface quality and polarity; composition control to within 1% using a special Rutherford backscattering (RBS) calibration procedure; and reduction of point and extended defect density to the 1% level. We pay particular attention to the zero-field nuclear magnetic resonance technique (NMR) that was used to obtain this level of sensitivity to the local disorder.

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Authors and Affiliations

  1. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

    Willem Van Roy

  2. Institute of Physics-Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warszawa, Poland

    Marek Wójcik

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  1. Willem Van Roy
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I. Galanakis P.H. Dederichs

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Van Roy, W., Wójcik, M. Epitaxial Growth of NiMnSb on GaAs by Molecular Beam Epitaxy. In: Galanakis, I., Dederichs, P. (eds) Half-metallic Alloys. Lecture Notes in Physics, vol 676. Springer, Berlin, Heidelberg. https://doi.org/10.1007/11506256_5

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  • DOI: https://doi.org/10.1007/11506256_5

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