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Trench-Filling Epitaxy of Germanium on (001) Silicon Enhanced Using [100]-Oriented Patterns

  • Topical Collection: 19th Conference on Defects (DRIP XIX)
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Abstract

This paper reports trench-filling epitaxy of Ge on (001) Si using [100]-oriented patterns, which is effective to fill the micron-deep trench in a short growth time. As a starting substrate, a trench with a width of about 0.6 µm and a depth of about 1.0 µm is prepared on a (001) Si wafer. The trench is aligned in the [100] direction, which deviates by 45° from the ordinary [110] direction. A Ge epitaxial film is selectively grown inside the trench by ultrahigh-vacuum chemical vapor deposition in a molecular flux regime. The mean free path of the GeH4 source gas is orders of magnitude longer than the trench depth of 1.0 µm, sufficiently supplying GeH4 in the trench. By aligning the trench in the [100] direction, Ge growth occurs not only on the trench bottom, but also on the {010} trench sidewalls. Despite the growth thickness of 0.5 µm on the flat (001) Si surface, the 1.0-µm-deep trench is fully filled with Ge, thanks to the growth on the sidewalls. For near-infrared photodetector applications, the tensile lattice strain due to the thermal expansion mismatch between Ge and Si is theoretically discussed in such a trench-filling structure.

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Authors and Affiliations

  1. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku, Toyohashi, Aichi, 441-8580, Japan

    Kota Kato, Kazuki Motomura, Jose A. Piedra-Lorenzana, Mohd Faiz Bin Amin, Takeshi Hizawa & Yasuhiko Ishikawa

  2. SUMCO Corporation, Imari, Saga, 849-4256, Japan

    Tetsuya Nakai

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  1. Kota Kato
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Correspondence to Yasuhiko Ishikawa.

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This study was funded by SUMCO Corporation. Tetsuya Nakai is an employee of SUMCO Corporation.

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Kato, K., Motomura, K., Piedra-Lorenzana, J.A. et al. Trench-Filling Epitaxy of Germanium on (001) Silicon Enhanced Using [100]-Oriented Patterns. J. Electron. Mater. 52, 5066–5074 (2023). https://doi.org/10.1007/s11664-023-10306-z

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