-
Article
Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ( \({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\) = 21.5 mol %)
The formation of ncl-Si in the amorphous matrix a-SiOx:H using a time-modulated DC plasma at an elevated oxygen content of $${...
-
Article
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( \({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %)
The effect of various operating conditions of time-modulated DC (direct current) plasma on the formation of an amorphous a-SiOx:H matrix and silicon nanoclusters is studied using IR (infrared) and photoluminescen...
-
Article
On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2) with time-modulated dc magnetron plasma
Activation of the process of amorphous-silicon-nanocluster formation in a hydrogenated amorphous- silicon suboxide matrix with time-modulated dc discharge plasma is investigated. The plasma is modulated by rep...
-
Article
Composition and optical properties of amorphous a-SiO x :H films with silicon nanoclusters
The phase composition and optical properties of hydrogenated amorphous films of silicon suboxide (a-SiO x :H) with silicon nanoclusters are studied. Ultrasoft X-ray emission spec...
-
Article
Peculiarities of the electronic structure and phase composition of amorphous (SiO2) x (a-Si: H) x–1 composite films according to X-ray spectroscopy data
Amorphous (SiO2) x (a-Si: H) x–1 composite films have been deposited from plasma of dc magnetron discharge switched on and off for variable pe...
-
Article
Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiO x :H (0 < x < 2)
Published data concerning plasma methods of the fabrication and study of silicon nanoclusters ncl-Si in crystalline (c-SiO2) and amorphous (a-SiOx:H) matrices are reviewed. The effect of radio-fre- quency (RF) an...
-
Article
Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, a-SiO x :H 〈Er,O〉, by dc-magnetron deposition
The results of a comprehensive study of the conditions for growing a-SiO x :H 〈Er,O〉 films are presented. The effect of the composition of various erbium-containing targets (a-Si...
-
Article
Luminescence of amorphous silicon nanoclusters
Films of amorphous silicon suboxide α-SiO x containing amorphous silicon nanoclusters have been grown by direct current magnetron sputtering. It has been found that two radiatio...
-
Article
Thermally induced defect photoluminescence in hydrogenated amorphous silicon
The intrinsic defect photoluminescence of hydrogenated amorphous silicon (a-Si:H) films has been investigated at high intensities of optical pum** that lead to heating of the film. It has been revealed that, fo...
-
Article
Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions
The effect of electric field on the elemental composition and photoluminescence of films of amorphous hydrogenated silicon doped with erbium and oxygen (a-SiO x :H(Er, O)) in the...
-
Article
Excitation of erbium in the heterogeneous nanocrystalline matrix of amorphous silicon
The erbium photoluminescence decay kinetics at a wavelength of 1.54 μm in amorphous hydrogenated silicon films obtained at high oxygen concentrations in a magnetron gas discharge is investigated. Optically act...
-
Article
The effect of erbium and oxygen on the photoluminescence intensity of erbium and the composition of a-SiOx:(H, Er, O) films deposited by DC magnetron sputtering
The effect of the oxygen content ( \(C_{O_2 } \) ) in the gas mixture (20% of SiH4 + 80% of Ar) + O2 and the surface ...
-
Article
A study of the effect of oxygen on the intensity of erbium photoluminescence in amorphous SiOx:(H, Er) films formed by DC magnetron sputtering
The effect of oxygen on the intensity of erbium photoluminescence at λ=1.54 µm in amorphous a-SiOx:H(Er) films formed by dc magnetron sputtering was studied. The oxygen content in the gaseous phase ranged from 0....
-
Article
Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
A comparative analysis of λ=1.54 μm electroluminescent structures based on amorphous hydrogenated silicon is made. The possibility of obtaining room-temperature electroluminescence from forward-biased conventi...
-
Article
Natural photopleochroism of n-In2O3-n-CdGeP2 heterojunctions
The photosensitivity of isotypical heterojunctions n-In2O3n-CdGeP2 in natural and linearly polarized light at temperatures in the range 160–370 K was studied. It was found that the photosensitivity to natural lig...
-
Article
Investigation of heterojunctions in the system SnO2-CdGeP2
Photosensitivity spectra of heterojunctions on the basis of SnO2 layers and n- and p-type conductivity CdGeP2 crystals are investigated in natural and linearly polarized radiation in the 160–360 K temperature ran...
-
Article
Photoelectric parameters of the heterojunctions ITO-CdGeP2
Photosensitive n-n and n-p structures based on CdGeP2 crystals and layers of indium and tin oxides were prepared by the method of reactive cathodic sputtering. The photoelectric properties of the structures in na...
-
Article
Photovoltaic effect in Cd2 SnO4-CdGeP2 heterojunctions
It is shown experimentally to be possible to form rectifying photosensitive heterojunctions by using the method of reactive cathodic sputtering to deposit layers of Cd2SnO4 on the surface of nand p-type CdGeP2 si...
-
Article
Electric and photoelectric properties of n-SnO2-n-CdGeP2〈In〉 heterojunction
-
Article
Photosensitivity of AIIBIVC 2 V -SnO2 diode structures
