-
Article
On the possible separation of the phase enriched with Nb in superconducting intermetallic Nb3Sn irradiated with fast protons
The results of the study of magnetization and dynamic magnetic susceptibility are correlated with changes in the microstructure of superconducting intermetallic Nb3Sn plates irradiated at the Kurchatov Institute ...
-
Article
Pair transfer as a function of pairing strength in an exactly solvable model
Pair transfer matrix elements between the ground and excited states of a two-level system with monopole pairing interaction as a function of the pairing strength are calculated. The exact energies of excited s...
-
Article
Application of green functions to finite Fermi systems with fixed numbers of particles and strong pairing
The single-particle Green function formalism (Gor’kov’s method) is applied to calculate the energies of finite superconducting Fermi systems with a finite number of particles. It is shown that strong pairing l...
-
Article
Flutter of a viscoelastic strip
The unsteady panel flutter of a viscoelastic strip is studied under the conditions when the pressure of aerodynamic interaction is specified by the relations distinct from the piston theory formulas. It is ass...
-
Article
The formation of developed morphology on the indium phosphide surface by ion argon beam sputtering
Self-organizing structures on the InP surface that are formed by ion-beam sputtering in the energy range 0.1–15 keV are investigated. It is shown that the processing of the InP surface by monochromatic argon b...
-
Article
Sputtering characteristics of fullerene C60 films under bombardment with 0.1–1-keV argon ions and atoms
The sputtering of fullerene C60 films under bombardment with Ar+ ions was studied. In thin films, blistering effects related to diffusion of the implanted argon ions along the layer and substrate interface have b...
-
Article
Sources of flicker noise and the technology of superconducting microstripes based on yttrium barium cuprate films
It has been shown by annealing simulations of YBa2Cu3O7 epitaxial films that the predominant sources of flicker noise in superconducting microstripes in operating ranges of frequency and temperature are related t...
-
Article
Excess noise in YBa2Cu3O7 epitaxial films and antenna-type microbolometers based on them
Monte Carlo modelled anneals of YBa2Cu3O7 epitaxial films have been carried out, and the excess flicker noise in the operating frequency and temperature ranges were shown to be dominated by oxygen migration near ...
-
Article
Gain characteristics of quantum-dot injection lasers
The current dependence of the optical gain in lasers based on self-organized InGaAs quantum dots in a AlGaAs/GaAs matrix is investigated experimentally. A transition from lasing via the ground state of quantum...
-
Article
InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm
Semiconductor heterostructures with vertical optical cavities with active regions, based on arrays of InAs quantum dots inserted in an external InGaAs quantum well, have been obtained by molecular-beam epitaxy...
-
Article
Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
A method is proposed to increase the emission wavelength from structures grown on GaAs substrates by inserting a strained InAs quantum dot array into an external InGaAs quantum well. The dependence of the lumi...
-
Article
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
The optical properties of structures containing InGaAs quantum dots in GaAs and AlGaAs matrices grown by molecular-beam epitaxy are investigated. It is shown that increasing the In content in the quantum dots ...
-
Article
Heterostructure for UV LEDs Based on Thick AlGaN Layers
Thick AlGaN layers and GaN/AlGaN heterostructures were grown by low pressure MOCVD on (0001) sapphire substrates utilizing a low temperature AlGaN buffer layer. The distribution of Al in the thick AlGaN layers...
-
Article
Effect of the quantum-dot surface density in the active region on injection-laser characteristics
A new method of increasing the surface density of self-organized semiconductor quantum dots formed by molecular-beam epitaxy is proposed. A comparative analysis of the characteristics of injection lasers based...
-
Article
Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm
InAs quantum dots in a InGaAs matrix grown on an InP substrate by molecular-beam epitaxy are employed as the active region of an injection laser. Lasing via quantum-dot states is observed in the temperature ra...
-
Article
Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region
Continuous-wave lasing has been demonstrated in a vertically coupled quantum-dot laser with a high output power (1.5 W) at room temperature. It was shown that anisotropy of the quantum dot profile leads to ani...
-
Article
Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm
The use of InAs quantum dots in an InGaAs matrix lattice-matched with an InP substrate can appreciably increase the emission wavelength of quantum-dot lasers. Lasing via quantum-dot states at the 1.84 μm waveleng...
-
Article
Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W
This paper describes a new cw laser with tunnel-coupled vertically aligned InGaAs quantum dots in an AlGaAs matrix with a room-temperature output power of ∼ 1 W at both mirrors. The maximum operating temperatu...
-
Article
Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C
Gaseous phase epitaxy from metal organic compounds is used to obtain a low-temperature injection laser with an active region based on In0.5Ga0.5As/GaAs quantum dots. Optimizing the growth conditions and geometric...
-
Article
Polarized photosensitivity of the heterojunctions p-Ge-n-CdGeP2<In>
The photoelectric properties are analyzed of heterojunctions obtained by hea** layers of germanium on oriented supports from CdGeP2<In>. It is discovered that as a result of the appearance of absorption anisotr...
