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  1. No Access

    Article

    Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV

    The mechanism of structure transformation in Cr/4H–SiC UV photo detectors, which is responsi-ble for the cyclic gettering of radiation defects, under repeated proton irradiation, is proposed in this work.

    I. P. Nikitina, E. V. Kalinina, V. V. Zabrodski in Technical Physics (2023)

  2. No Access

    Article

    Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors

    The influence exerted by the carrier concentration in the range (1–50) × 1014 cm–3 in n-4H-SiC chemical-vapor deposited (CVD) epitaxial layers on the spectral characteristics of UV photodetectors with Cr Schottky...

    E. V. Kalinina, G. N. Violina, I. P. Nikitina, E. V. Ivanova… in Semiconductors (2020)

  3. No Access

    Article

    Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers

    For the first time, comprehensive comparative investigations of ultraviolet photodetectors with Cr Schottky barriers formed on 4H-SiC epitaxial layers are carried out by the X-ray and optical methods before and a...

    E. V. Kalinina, G. N. Violina, I. P. Nikitina, M. A. Yagovkina… in Semiconductors (2019)