Skip to main content

and
  1. No Access

    Article

    Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors

    The influence exerted by the carrier concentration in the range (1–50) × 1014 cm–3 in n-4H-SiC chemical-vapor deposited (CVD) epitaxial layers on the spectral characteristics of UV photodetectors with Cr Schottky...

    E. V. Kalinina, G. N. Violina, I. P. Nikitina, E. V. Ivanova in Semiconductors (2020)

  2. No Access

    Article

    Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers

    For the first time, comprehensive comparative investigations of ultraviolet photodetectors with Cr Schottky barriers formed on 4H-SiC epitaxial layers are carried out by the X-ray and optical methods before and a...

    E. V. Kalinina, G. N. Violina, I. P. Nikitina, M. A. Yagovkina in Semiconductors (2019)