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  1. No Access

    Article

    Temperature Dependence of Quantum Efficiency of InGaN/GaN Led Structures at High Current Density

    Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quantum wells is studied at different forward currents. At high current densities, an increase in the quantum eff...

    I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. N. Brudnyi in Russian Physics Journal (2015)

  2. No Access

    Article

    Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures

    The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting of InGaN m...

    I. S. Romanov, I. A. Prudaev, V. N. Brudnyi, V. V. Kopyev… in Russian Physics Journal (2015)

  3. No Access

    Article

    Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pum**

    We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple InxGa1–xN/GaN quantum wells with short-period InyGa1–yN/GaN superl...

    I. A. Prudaev, I. S. Romanov, V. V. Kopyev, V. N. Brudnyi… in Russian Physics Journal (2016)

  4. No Access

    Article

    On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

    The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitati...

    I. A. Prudaev, V. V. Kopyev, I. S. Romanov, V. L. Oleynik in Semiconductors (2017)

  5. No Access

    Article

    Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells

    The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal quantum efficiency (IQE) of photoluminescence are p...

    I. S. Romanov, I. A. Prudaev, V. V. Kopyev in Russian Physics Journal (2018)

  6. No Access

    Article

    Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga2O3

    The effect of ultraviolet radiation and a strong electric field on the conductivity of structures based on two types of polymorphic gallium-oxide films is studied. Both types of Ga2O3 films are obtained by hydrid...

    V. M. Kalygina, V. I. Nikolaev, A. V. Almaev, A. V. Tsymbalov… in Semiconductors (2020)

  7. No Access

    Article

    Electrical Conductive and Photoelectrical Properties of Heterostructures Based on Gallium and Chromium Oxides with Corundum Structure

    α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties of the obtai...

    D. A. Almaev, A. V. Almaev, V. V. Kopyev, V. I. Nikolaev… in Technical Physics Letters (2023)