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  1. No Access

    Article

    Kinetics of the initial stage in chalcogenide passivation of III–V semiconductors

    A mathematical model of thermally stimulated heterovalent substitution of anions in the III–V surface region in the course of chalcogenide passivation from the gaseous phase is substantiated and formulated. Th...

    V. F. Antyushin, A. V. Budanov, D. S. Kukharenko, D. A. Palishkin in Semiconductors (2003)

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    Article

    The initial stage of the gallium selenide-gallium arsenide structure formation by heterovalent substitution of selenium for arsenic

    The initial stage of Ga2Se3-GaAs heterostructure formation by heterovalent substitution of selenium for arsenic in the solid state was studied by methods of scanning tunneling microscopy, electron microscopy, opt...

    V. F. Antyushin, A. V. Budanov, E. A. Tatokhin… in Technical Physics Letters (2002)

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    Article

    Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures

    The dependence of the electron drift mobility in the undepleted conduction channels of Ga2Se3/GaAs heterostructures on the surface charge density is measured. The presence of charge coupling in the accumulation l...

    V. F. Antyushin, D. A. Vlasov, I. N. Arsent’ev in Semiconductors (1998)