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Kinetics of the initial stage in chalcogenide passivation of III–V semiconductors

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

A mathematical model of thermally stimulated heterovalent substitution of anions in the III–V surface region in the course of chalcogenide passivation from the gaseous phase is substantiated and formulated. This model is represented in the form of a nonlinear system of differential equations. It is shown that the initial state of the surface (the initial surface concentration of anionic vacancies) profoundly affects the relevant kinetics.

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Authors and Affiliations

  1. Voronezh State Technological Academy, pr. Revolyutsii 19, Voronezh, 394017, Russia

    V. F. Antyushin, A. V. Budanov, D. S. Kukharenko & D. A. Palishkin

Authors
  1. V. F. Antyushin
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  2. A. V. Budanov
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  3. D. S. Kukharenko
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  4. D. A. Palishkin
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 11, 2003, pp. 1349–1351.

Original Russian Text Copyright © 2003 by Antyushin, Budanov, Kukharenko, Palishkin.

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Antyushin, V.F., Budanov, A.V., Kukharenko, D.S. et al. Kinetics of the initial stage in chalcogenide passivation of III–V semiconductors. Semiconductors 37, 1311–1314 (2003). https://doi.org/10.1134/1.1626215

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  • DOI: https://doi.org/10.1134/1.1626215

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