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The initial stage of the gallium selenide-gallium arsenide structure formation by heterovalent substitution of selenium for arsenic

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Abstract

The initial stage of Ga2Se3-GaAs heterostructure formation by heterovalent substitution of selenium for arsenic in the solid state was studied by methods of scanning tunneling microscopy, electron microscopy, optical microscopy, and electron diffraction.

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Authors and Affiliations

  1. Voronezh State Technological Academy, Voronezh, 394017, Russia

    V. F. Antyushin, A. V. Budanov, E. A. Tatokhin & Ya. A. Boldyreva

Authors
  1. V. F. Antyushin
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  2. A. V. Budanov
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  3. E. A. Tatokhin
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  4. Ya. A. Boldyreva
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Additional information

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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 28, No. 7, 2002, pp. 68–72.

Original Russian Text Copyright © 2002 by Antyushin, Budanov, Tatokhin, Boldyreva.

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Antyushin, V.F., Budanov, A.V., Tatokhin, E.A. et al. The initial stage of the gallium selenide-gallium arsenide structure formation by heterovalent substitution of selenium for arsenic. Tech. Phys. Lett. 28, 295–297 (2002). https://doi.org/10.1134/1.1476995

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  • DOI: https://doi.org/10.1134/1.1476995

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