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  1. No Access

    Article

    Bistability in a One-Dimensional Model of a Two-Predators-One-Prey Population Dynamics System

    In this paper, we study a classical two-predators-one-prey model. The classical model described by a system of three ordinary differential equations can be reduced to a one-dimensional bimodal map. We prove th...

    S. Kryzhevich, V. Avrutin, G. Söderbacka in Lobachevskii Journal of Mathematics (2021)

  2. No Access

    Article

    On the Light Emission in GaN Based Heterostructures at High Injection

    For light emitting diodes (LEDs) to be used for general lighting, high efficiencies would need to be retained at high injection levels to meet the intensity and efficiency requirements. In this regard, it is i...

    X. Ni, X. Li, J. Lee, H. Y. Liu, N. Izyumskaya… in MRS Online Proceedings Library (2020)

  3. Article

    Open Access

    Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

    Photoluminescence (PL) was used to estimate the concentration of carbon in GaN grown by hydride vapor phase epitaxy (HVPE). The PL data were compared with profiles of the impurities obtained from secondary ion...

    M. A. Reshchikov, M. Vorobiov, O. Andrieiev, K. Ding, N. Izyumskaya… in Scientific Reports (2020)

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  4. Article

    Open Access

    Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

    Point defects in high-purity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved photoluminescence (PL). The electron-capture coefficients for defects responsible for ...

    M. A. Reshchikov, J. D. McNamara, M. Toporkov, V. Avrutin, H. Morkoç… in Scientific Reports (2016)

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  5. No Access

    Article

    Three-Step Deposition Method for Improvement of the Dielectric Properties of BST Thin Films

    Epitaixal Ba0.5Sr0.5TiO3 (BST) thin films were grown on SrTiO3 (STO) and DyScO3 substrates by radio-frequency magnetron sputtering system using three-step method which involves a relatively low-temperature (573-7...

    H. Liu, V. Avrutin, C. Zhu, J.H. Leach, E. Rowe, L. Zhou… in MRS Online Proceedings Library (2012)

  6. No Access

    Article

    Absence of Lateral Composition Fluctuations in Aberration-corrected STEM Images of an InGaN Quantum Well at Low Dose

    By using aberration corrected scanning transmission electron microscopy we have found no small scale lateral In composition fluctuations exist in the In0.15Ga0.85N active region of a light emitting diode. Images ...

    Andrew B. Yankovich, A. V. Kvit, X. Li, F. Zhang… in MRS Online Proceedings Library (2012)

  7. No Access

    Article

    Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire Templates

    We report on a strong effect of p-GaN surface morphology on the growth mode and surface roughness of ZnO:Ga films grown by plasma-assisted molecular-beam epitaxy on p-GaN/c-sapphire templates. A range of ZnO:G...

    H. Y. Liu, V. Avrutin, N. Izyumskaya, M. A. Reshchikov… in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    Surface Characterization of Ga-doped ZnO layers

    Epitaxial ZnO layers heavily doped with Ga (GZO) were grown at 400 °C under metaland oxygen-rich conditions in terms of metal-to-reactive oxygen ratio by plasma-assisted molecular beam epitaxy (MBE). Several a...

    J. D. McNamara, J. D. Ferguson, M. Foussekis, I. Ruchala… in MRS Online Proceedings Library (2011)

  9. No Access

    Article

    Self-similarity of the bandcount adding structures: Calculation by map replacement

    Recently it has been demonstrated that the domain of robust chaos close to the periodic domain, which is organized by the period-adding structure, contains an infinite number of interior crisis bifurcation cur...

    V. Avrutin, M. Schanz, L. Gardini in Regular and Chaotic Dynamics (2010)

  10. No Access

    Article

    Effect of growth conditions on structural and electrical properties of Ga-doped ZnO films grown by plasma-assisted MBE

    ZnO has recently attracted a great deal of attention as a material for transparent contacts in light emitters and adsorbers. ZnO films heavily doped with Ga (carrier concentration in the range of 1020–1021 cm−3) ...

    V. Avrutin, H.Y. Liu, N. Izyumskaya, M.A. Reshchikov… in MRS Online Proceedings Library (2009)

  11. No Access

    Article

    Visible Luminescence Related to Defects in ZnO

    We studied several photoluminescence (PL) bands in undoped, Li-, Ga-, and N-doped high-quality ZnO bulk crystals and thin films grown by molecular beam epitaxy (MBE). By analyzing PL in a wide range of excitat...

    Michael A. Reshchikov, B. Nemeth, J. Nause, J. **e… in MRS Online Proceedings Library (2008)

  12. No Access

    Article

    Effect of Growth Conditions on Structural and Electrical Properties of Pb(ZrxTi1-x)O3 layers grown by peroxide MBE

    Pb(ZrxTi1-x)O3 (PZT) films were grown by molecular beam epitaxy using hydrogen peroxide as a source of reactive oxygen. Phase composition as well as structural and electrical properties of the films were studied ...

    N. Izyumskaya, V. Avrutin, X. Gu, B. **ao, S. Chevtchenko… in MRS Online Proceedings Library (2007)

  13. No Access

    Article

    Optical and Magnetic Properties of ZnO:V Prepared by Ion Implantation

    We report on the optical and magnetic properties of the magnetic semiconductor Zn(V)O fabricated by implantation of 195 keV 51V+ ions into bulk ZnO:Al grown by a hydrothermal technique. Two sets of the samples, c...

    V. Avrutin, Ü. Özgür, S. Chevtchenko, C. Litton… in Journal of Electronic Materials (2007)