96 Result(s)

Article

High-temperature diffusion of phosphorus and boron in silicon via vacancies or via self-interstitials?

The paper re-examines the effect of oxidation on the diffusion of phosphorus and boron in silicon as well as recent results on redistribution phenomena of these dopants under irradiation and on the emitter-pus...

U. Gösele, H. Strunk in Applied physics (1979)

Article

The influence of intrisic defects on the degradation and luminescence of GaAs and other III–V compounds

A significant contribution to the degradation of GaAs-based lasers and light-emitting diodes arises from the formation of so-called dark line defects. It is shown that these defects are accumulations of non-ra...

W. Frank, U. Gösele in Applied physics (1980)

Article

Mechanism and kinetics of the diffusion of gold in silicon

The diffusion of Au in Si is known to take place via the interchange of Au atoms between substitutional (Au _s ) and interstitial (Au _i ) sites. ...

U. Gösele, W. Frank, A. Seeger in Applied physics (1980)

Article

Oxygen diffusion and thermal donor formation in silicon

The information available on the diffusion of oxygen and on the formation of thermal donors in silicon is critically reviewed. In this context the effects of intrinsic point defects on the diffusion-controlled...

U. Gösele, T. Y. Tan in Applied Physics A (1982)

Article

Effect of Concentration Gradient on Phase Stability

A feature of thin film reaction that is different from the reaction in bulk samples is the tendency to form a single intermetallic compound rather than all of them which are allowed according to the equilibriu...

K. N. Tu, U. Gösele in MRS Online Proceedings Library (1982)

Article

Thermal Donor Formation by the Agglomeration of Oxygen in Silicon

We suggest that thermal donor formation in silicon involves fast-diffusing, gas-like molecular oxygen in dynamical equilibrium with atomic oxygen in interstitial position. We will discuss still remaining diffi...

U. Gösele, T. Y. Tan in MRS Online Proceedings Library (1982)

Article

The Nature of Point Defects and their Influence on Diffusion Processes in Silicon at High Temperatures

The paper highlights recent progress in understanding the role of vacancies and self-interstitials in self- and impurity diffusion in silicon above about 700°C. How surface oxidation of silicon leads to a pert...

U. GÖsele, T. Y. Tan in MRS Online Proceedings Library (1982)

Article

On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon

An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -r...

T. Y. Tan, U. Gösele, F. F. Morehead in Applied Physics A (1983)

Article

The Influence of Point Defects on Diffusion and Gettering in Silicon

In a first part, we deal with the influence of intrinsic point defects (vacancies and self-interstitials) on self- and impurity diffusion in silicon. Estimates of the diffusivities and thermal equilibrium conc...

U. Gösele, T. Y. Tan in MRS Online Proceedings Library (1984)

Article

Enhanced Carbon Diffusion in Silicon During 900°0 Annealing

Enhanced diffusion of carbon is observed to be produced during annealing of silicon at 900°C under conditions of surface oxidation and phosphorus in-diffusion. Silicon containing high concentrations of carbon ...

L. A. Ladd, J. P. Kalejs, U. Gösele in MRS Online Proceedings Library (1984)

Article

Point defects, diffusion processes, and swirl defect formation in silicon

The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These resul...

T. Y. Tan, U. Gösele in Applied Physics A (1985)

Article

The Role of Carbon and Point Defects in Silicon

An overview of the behavior of intrinsic point defects in silicon and their interaction with carbon is given for temperatures above about 500° C. The diffusive mechanism of carbon in silicon, which involves si...

U. Gösele in MRS Online Proceedings Library (1985)

Article

Two-dimensional phosphorus diffusion for soft drains in silicon MOS transistors

Phosphorus has a considerably less steep concentration profile than arsenic. Therefore phosphorus is considered as an alternative dopand for soft drain concepts in future MOS devices. In-diffusion of phosphoru...

F. Lau, U. Gösele in Applied Physics A (1986)

Article

Mechanisms of Do**-Enhanced Superlattice Disordering and of Gallium Self-Diffusion in GaAs

Recently available Ga-Al interdiffusion results in GaAs/AlAs superlattices allow to conclude that Ga self-diffusion in GaAs is carried by triply-negatively charged Ga vacancies under intrinsic and n-do** con...

T. Y. Tan, U. Gösele, B.P.R. Marioton in MRS Online Proceedings Library (1987)

Article

Mechanisms of Self-Diffusion and of Do**-Enhancement of Superlattice Disordering in GaAs and AlAs Compounds

An understanding of the mechanisms of self-diffusion and of interdiffusion in the compound materials GaAs and AlAs may be arrived at byt noting the effects of (i) charge, (ii) As pressure, and (iii) point defe...

T. Y. Tan, U. Gösele in MRS Online Proceedings Library (1988)

Chapter

Diffusion in Semiconductors

Atomic diffusion processes in semiconductors play an important role in the fabrication of electronic devices in various areas. These areas include:

1. ...

U. Gösele in Microelectronic Materials and Processes (1989)

Article

Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon?

In- and out-diffusion experiments of oxygen in silicon indicate the existence of an oxygen-containing species diffusing much faster than interstitial oxygen at temperatures below about 700°C. The formation of ...

U. Gösele, K. -Y. Ahn, B. P. R. Marioton, T. Y. Tan, S. -T. Lee in Applied Physics A (1989)

Article

Diffusion in Gallium Arsenide and GaAs-Based Layered Structures

The mechanisms of Ga self-diffusion can be derived from interdiffusion experiments in intrinsic and doped GaAs-based superlattices. These experiments allow to conclude that Ga self-diffusion in intrinsic and n...

U. Gösele, T. Y. Tan, Shaofeng Yu in MRS Online Proceedings Library (1989)

Article

Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers

Models for the growth and shrinkage of an interfacial oxide layer and for the stability of the interfacial oxide layer are formulated. Predictions of these models are compared to results obtained by high-resol...

K.-Y. Ahn, R. Stengl, T. Y. Tan, U. Gösele, P. Smith in Applied Physics A (1990)