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Nanomaterials Based on Peptide Nanotubes with Graphene and Ferroelectric Polymers Layers: Modelling and Numerical Studies of Photoelectronic Properties
Peptide nanotubes (PNT), based on diphenylalanine (FF), have attracted considerable attention due to their biocompatibility, functional recognition, unique electronic properties, significant intrinsic polariza...
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Article
Open AccessUltra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains
With the further miniaturization and integration of multi-dimensional optical information detection devices, polarization-sensitive photodetectors based on anisotropic low-dimension materials have attractive p...
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Article
Phage nanoparticle as a carrier for controlling fungal infection
A mass of nanocarriers have been exploited and utilized for prevention of fungi, including organic nanomaterials, inorganic nanoparticles, polypeptides, and viruses. Due to biological safety and flexible genet...
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Article
Open AccessFerroelectric-tuned van der Waals heterojunction with band alignment evolution
Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In a specific van der Waals heterojunction, the band alignment engineering is crucial...
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Article
Interface engineering of ferroelectric-gated MoS2 phototransistor
Two-dimensional (2D) layered materials have received significant attention owing to their unique crystal structures as well as outstanding optical and electric properties in photoelectric detection. However, m...
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Open AccessA versatile photodetector assisted by photovoltaic and bolometric effects
The advent of low-dimensional materials with peculiar structure and superb band properties provides a new canonical form for the development of photodetectors. However, the limited exploitation of basic proper...
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Article
Open AccessUltrasensitive negative capacitance phototransistors
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promis...
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Article
Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains
Semiconductor devices based on two-dimensional (2D) transition metal dichalcogenides could help overcome the scaling limits of silicon complementary metal–oxide–semiconductor (CMOS) technology. However, the de...
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A study on ionic gated MoS2 phototransistors
Molybdenum disulfide (MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field prov...
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Open AccessTwo-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating
Conventional field-effect transistors (FETs) are not expected to satisfy the requirements of future large integrated nanoelectronic circuits because of these circuits’ ultra-high power dissipation and because ...
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Flexible graphene field effect transistor with ferroelectric polymer gate
A transparent, flexible graphene field effect transistor (GFET) based on ferroelectric gate is demonstrated. In this device, the single layer graphene was fabricated by chemical vapor deposition method, and tr...
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Ferroelectric control of magnetism in P(VDF–TrFE)/Co heterostructure
Multiferroic magnetoelectric composite systems such as ferroelectric and ferromagnetic heterostructures have attracted an interest recently and have the potential applications such as four state memories, magn...
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Transplantation of bone marrow stromal cells enhances nerve regeneration of the corticospinal tract and improves recovery of neurological functions in a collagenase-induced rat model of intracerebral hemorrhage
The reorganization of brain structures after intracerebral hemorrhage (ICH) insult is crucial to functional outcome. Although the pattern of neuronal rewiring is well-documented after ischemic stroke, the stud...
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Influence of the illumination on the subband structure and occupation in Al x Ga1−x N/GaN heterostructures
The subband structure and occupation in the triangular quantum well at Al x Ga1−x N/GaN heterointerfaces have been investigated by means of temperature de...
