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Article
Open AccessInfluence of surface and material technologies on the loss of lubrication performance of gears
Enabling gears to withstand loss of lubrication in gearboxes without secondary oil supply systems can reduce weight and space demand and thus fuel consumption. This study investigates the potential of surface ...
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Article
Open AccessEvaluation of friction calculation methods for rolling bearings
In gearboxes, rolling bearing power losses often make up a large amount of the total gearbox power losses. Therefore, an exact calculation of rolling bearing power losses is very important for resource and ene...
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Article
Open AccessDLC-Coated Thermoplastics: Tribological Analyses Under Dry and Lubricated Sliding Conditions
The purpose of this study was to increase the limited wear resistance of polymers in highly stressed tribological contacts. Therefore, diamond-like carbon (DLC) coatings were firstly developed and deposited on...
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Article
Open AccessDLC-Coated Thermoplastics: Tribological Analyses under Lubricated Rolling-Sliding Conditions
The goal of this work is to evaluate the potential of diamond-like carbon (DLC) coatings on thermoplastic polymers for friction and wear reduction in highly stressed rolling–sliding contacts. Therefore, hydrog...
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Article
Open AccessEfficient lubrication of a high-speed electromechanical powertrain with holistic thermal management
In order to increase the power density of BEVs (Battery Electric Vehicles), high-speed concepts are being progressively developed. With increased speed, the power of the electrical machine can be maintained wi...
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Open AccessA Numerical Study on Thermal Elastohydrodynamic Lubrication of Coated Polymers
The application of polymers in power-transmitting machine elements, e.g., gears, is limited by moderate thermo-mechanical properties and the detrimental accumulation of contact heat, even with external lubrica...
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Article
Light Emission Versus Excitation from Porous Structures in Ion-Implanted Silicon
The quantum efficiency of electroluminescence (EL) in porous silicon structures (PSL) is practically limited by the mechanical instability of higher porosity layers. This can be overcome by adding a thin impla...
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Article
Studies on the RF sputtered amorphous SiGe thin films
In this study, rf sputtered hydrogenated amorphous silicon-germanium thin films deposited at room temperature have been investigated by spectroscopic ellipsometry and Rutherford backscattering. Technological p...
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Article
A Combined Topographical Search Strategy with Ellipsometric Application
A comparison deals with the advantages and disadvantages of the classical random-base, exhaustive and gradient searches and presents a precise local search combined global search control strategy including a n...
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Article
Rapid Thermal Oxidation for Passivation of Porous Silicon
Chemical and mechanical stability of porous silicon layers (PSL) is the prerequisite of any active (luminescent) or passive (e.g. porous substrate) integrated applications. In this work X-ray diffraction (XRD)...
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Article
Enhanced sensitivity of oxygen detection of 3.045 MeV (α, α) elastic scattering and its applications
Based on a simple theoretical background, numerous applications of the16O(α, α)16O reaction are reviewed. The reaction lowers the detection limit of the conventional RBS by a factor of 17. The advantages of the m...
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Article
Analysis of High Dose Implanted Silicon by High Depth Resolution RBS and Spectroscopic Ellipsometry and TEM
One of the applications of high dose ion implantation is to form surface alloys or compound layers. The detailed characterization of such composite structures is of great importance. This paper tries to answer...
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Article
Characterization of ion-implanted silicion by Rutherford backscattering spectrometry and ellipsometry
It is demonstrated that the information obtained by Rutherford backscattering spectrometry and channeling technique can substantially help in the construction of a realistic optical model for the ellipsometry ...
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Photoelectric properties of ion-implanted silicon
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Enhanced and Inhibited Oxidation of Implanted Silicon
Silicon samples of different orientation were implanted with ions of group IV, III and V and subsequently oxidized (sometimes after a preanneal). Among species investigated Ge, Si and Ga showed strong passivat...