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    Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres

    Uniform direct or fusion wafer bonding of GaAs wafers up to 4 inch in diameter was achieved by means of two methods: (i) pre-heating, bonding at elevated temperatures and post-annealing in a H2 atmosphere (gas en...

    G. Kästner, T. Akatsu, S. Senz, A. Plössl, U. Gösele in Applied Physics A (2000)