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Mosaic Structure and Cathodoluminescence of GaN Epilayer Grown by LP-MOVPE
We have studied the growth of GaN on (0001) sapphire and (111) spinel substrates by LP-MOVPE and compared the mosaic structure and cathodoluminescence for the heteroepitaxial films of GaN grown on these substr...
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Article
Quasi-Thermodynamic Analysis of Metalorganic Vapor Phase Epitaxy of GaN
A thermodynamic analysis of GaN grown by MOVPE has been proposed based on quasi-thermodynamic equilibrium established on the solid-vapor interface. Phase diagrams for the MOVPE growth of GaN using TEGa and NH3 ha...