Abstract
We have studied the growth of GaN on (0001) sapphire and (111) spinel substrates by LP-MOVPE and compared the mosaic structure and cathodoluminescence for the heteroepitaxial films of GaN grown on these substrates.
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Acknowledgement
The authors would like to thank Prof. Cheng ji Li for discussion on the CL measurements.
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Duan, S., Teng, X., Li, Y. et al. Mosaic Structure and Cathodoluminescence of GaN Epilayer Grown by LP-MOVPE. MRS Online Proceedings Library 468, 207–211 (1997). https://doi.org/10.1557/PROC-468-207
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DOI: https://doi.org/10.1557/PROC-468-207