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Article
Room-temperature ferromagnetism in Mn-N Co-doped p-ZnO epilayers by metal-organic chemical vapor deposition
Mn-N co-doped Zn epilayers were grown by metal-organic chemical vapor deposition. The Mn-N co-doped epilayers exhibit single phase hexagonal wurtzite structure, indicative of the small lattice damage from co-d...
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Article
Charge storage characteristics in Al/AlN/Si metal–insulator–semiconductor structure based on deep traps in AlN layer
Charge storage characteristics in an Al/AlN/p-Si metal–insulator–semiconductor (MIS) structure have been investigated by capacitance–voltage and long-term capacitance measurements. Good program/erase behavior ...
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Article
Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
The dependence of two-dimensional electron gas (2DEG) density and distribution in an AlxGa1-xN/AlN/GaN heterostructure on the thicknesses of the AlxGa1-xN barrier layer and the AlN interfacial layer are investiga...
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Article
Correlation between green luminescence and morphology evolution of ZnO films
Photoluminescence and atomic force microscopy have been used to characterize ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD) at varied growth pressures. The surface morphology with diff...
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Article
MOCVD growth and properties of ZnO films using dimethylzinc and oxygen
The ZnO films were grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) using dimethylzinc (DMZn) and oxygen. The as-grown film has strong (0002) oriented characteristic, containing the cha...
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Article
Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal–organic chemical vapor deposition
The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal–organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that ...
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Article
Substrate temperature dependence of properties of ZnO thin films deposited by LP-MOCVD
ZnO films were prepared on (0002) sapphire by metal-organic chemical vapor deposition (MOCVD) with fixed Zn and O gas flow rates. The film properties displayed complex dependencies on temperature over the rang...
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Article
Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors
In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently sol...
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Article
Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors
The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrödinger’s and Poisson’s equations. Considering the piezoelectric...
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Article
Fabrication of silicon nanowires
at 750 °C and 850 °C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 °C still ke...
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Article
Realization of silicon quantum wires by selective chemical etching and thermal oxidation
Ultra-fine silicon quantum wires with SiO2 boundaries were successfully fabricated by combining SiGe/Si heteroepitaxy, selective chemical etching and subsequent thermal oxidation. The results are observed by scan...
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Article
Ellipsometric studies of porous silicon
Multiple-angle-of-incidence (MAI) ellipsometry at 632.8 nm is used to characterize P and P+ porous silicon of high porosity. Complex dielectric constants are obtained, from which the porosity can be estimated qua...