![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
NaInX2 (X = S, Se) layered materials for energy harvesting applications: first-principles insights into optoelectronic and thermoelectric properties
In recent times, layered chalcogenide semiconductors have attracted great interest in energy harvesting device applications. In the present study, the structural, electronic, optical and thermoelectric propert...
-
Article
Crystal Growth of Bi2Sr2CaCu2Ox Superconductor by Zone Melting Technique
We attempted to grow single crystals of Bi2Sr2CaCu2Ox (Bi-2212) by Traveling Solvent Zone Melting (TSZM) technique using a gold crucible to stabilize the molten zone as well as to control the composition of Bi-22...
-
Article
Large enhancement of the thermopower in NaxCoO2 at high Na do**
Research on the oxide perovskites has uncovered electronic properties that are strikingly enhanced compared with those in conventional metals. Examples are the high critical temperatures of the cuprate superco...
-
Article
Preparation and Electronic Device Properties of Single Crystalline La2−xSrxCuO4Superconducting Film
We have grown La2−xSrxCuO4 single-crystalline films on atetra-axis oriented Zn doped La2CuO4 single crystals by IR-LPE technique. The films show thickness dependence of Tc,onset, but films of thickness below 80μm...
-
Chapter and Conference Paper
Effect of Parallel Magnetic Field on the Melting Transition in BSCCO
Vortex states under magnetic fields oriented nearly parallel to the superconducting plane in Bi2Sr2CaCu2O8 single crystals have been studied by means of the self-inductance ac susceptibility measurement in the fr...
-
Article
Resistivity measurements and the vortex phase diagram of Bi2Sr2CaCu2O y
We have measured the temperature dependence of the ab-plane resistivity on Bi2Sr2CaCu2Oy single crystals with high sensitivity. A clear resistivity drop was observed when a relatively low magnetic field was appli...
-
Article
Defects in electron irradiated amorphous SiO2 probed by positron annihilation
Defects in 3-MeV electron irradiated amorphous (a-) SiO2 were studied by the positron annihilation technique. A high formation probability of positronium (Ps) was found for un-irradiated a-SiO2 specimens. These P...
-
Article
Defects in separation by implanted oxygen wafer probed by monoenergetic positron beams
Defects in the separation by implanted oxygen (SIMOX) wafers were studied by monoenergetic positron beams. For the as-implanted specimen, vacancies introduced by ion implantation were found to form vacancy-oxy...
-
Article
Point Defect Assisted Crystal Growth of Bulk ZnSe
Bulk ZnSe single crystals were grown by annealing a CVD grown polycrystalline ingot in a selenium atmosphere for two weeks at 1000°C. To identify the defect structures closely related to the observed grain gro...
-
Article
Evaluation of Vacancy-Type Defects in Simox Substrates by a Slow Positron Beam and a Pulsed Positron Beam
Slow/monoenergetic positron beams and pulsed positron beams have been used as a non-destructive probe to investigate vacancy-type defects in SIMOX substrates which were formed by high - dose oxygen implantatio...