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  1. No Access

    Article

    Defects in electron irradiated amorphous SiO2 probed by positron annihilation

    Defects in 3-MeV electron irradiated amorphous (a-) SiO2 were studied by the positron annihilation technique. A high formation probability of positronium (Ps) was found for un-irradiated a-SiO2 specimens. These P...

    A. Uedono, S. Watauchi, Y. Ujihira, O. Yoda in Hyperfine Interactions (1994)

  2. No Access

    Article

    Positron annihilation in electron irradiated Cz-Si

    Defects in electron irradiated Cz-Si were studied by the positron annihilation technique. In order to know effects of the thermal history of crystals on the introduction of defects, the specimen was quenched f...

    A. Uedono, Y. Ujihira, A. Ikari, H. Haga, O. Yoda in Hyperfine Interactions (1993)

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    Article

    Nucleation of Oxygen Precipitates in a Quenched Czochralski Silicon Crystal

    We have studied the nucleation of oxygen precipitates in Czochralski(Cz) Si crystal quenched from high temperature (1390°C). We observed that the oxygen precipitation was enhanced by the quenching treatment. W...

    A. Ikari, H. Haga, O. Yoda, A. Uedono, Y. Ujihira in MRS Online Proceedings Library (1992)

  4. No Access

    Article

    Lamellare Struktur von Poly(tetraoxan), das durch strahleninduzierte Polymerisation im Festzustand erhalten wurde

    T. Kato, Y. Nakase, O. Yoda, I. Kuriyama, A. Odajima in Colloid and Polymer Science (1978)