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Chapter
Band Structure and High-pressure Measurements
Determination of the electronic energy vs momentum relationship in semiconductors is essential for the prediction of almost all of their properties. In materials useful for mid-infrared applications, the simplest...
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Article
Temperature insensitive quantum dot lasers: are we really there yet?
Twenty five years ago Arakawa suggested that by confining carriers in three dimensions (in quantum dots) a temperature insensitive threshold current (Ith) could be achieved in semiconductor lasers. In this paper ...
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Article
Comparative Study of Pt/Pd and Pt–Rh/Pt Thermocouples
The Pt/Pd thermocouple has demonstrated superior thermoelectric drift and homogeneity performance over conventional Pt–Rh/Pt thermocouples. Here, we present a systematic comparison of the drift and homogeneity...
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Article
Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors
We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealin...
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Chapter
Bismide-Based Photonic Devices for Near- and Mid-Infrared Applications
Bismides are a new class of III–V semiconductor alloys which are gaining interest due to their many potential applications. In this chapter we show how the addition of bismuth atoms to III–V alloys gives rise ...
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Article
Open AccessTemperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
GaInAsSb/GaSb based quantum well vertical cavity surface emitting lasers (VCSELs) operating in mid-infrared spectral range between 2 and 3 micrometres are of great importance for low cost gas monitoring applic...
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Article
Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures
This paper reports on laser excitation power dependent photoluminescence (PL) studies on epitaxial GaAs1−xBix (2.3% < x < 10.4%) layers with thicknesses of 30–40 nm which are compressively strained onto GaAs subs...
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Article
Open AccessChallenges for room temperature operation of electrically pumped GeSn lasers
Recent demonstrations of room-temperature lasing in optically pumped GeSn show promise for future CMOS compatible lasers for Si-photonics applications. However, challenges remain for electrically pumped device...