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Article
Open AccessThe multi-photon induced Fano effect
The ordinary Fano effect occurs in many-electron atoms and requires an autoionizing state. With such a state, photo-ionization may proceed via pathways that interfere, and the characteristic asymmetric resonan...
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Article
Giant multiphoton absorption for THz resonances in silicon hydrogenic donors
The absorption of multiple photons when there is no resonant intermediate state is a well-known nonlinear process in atomic vapours, dyes and semiconductors. The N-photon absorption (NPA) rate for donors in semic...
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Article
Open AccessCoherent superpositions of three states for phosphorous donors in silicon prepared using THz radiation
Superposition of orbital eigenstates is crucial to quantum technology utilizing atoms, such as atomic clocks and quantum computers, and control over the interaction between atoms and their neighbours is an ess...
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Article
Open AccessCorrection: Corrigendum: Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out
Nature Communications 6: Article number: 6549 (2015); Published: 20 March 2015; Updated: 20 April 2017 This Article was originally published under a CC BY-NC-ND 4.0 license, but has now been made available und...
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Article
Open AccessOptical pum** and readout of bismuth hyperfine states in silicon for atomic clock applications
The push for a semiconductor-based quantum information technology has renewed interest in the spin states and optical transitions of shallow donors in silicon, including the donor bound exciton transitions in ...
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Article
Open AccessCoherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out
The ability to control dynamics of quantum states by optical interference, and subsequent electrical read-out, is crucial for solid state quantum technologies. Ramsey interference has been successfully observe...
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Chapter and Conference Paper
Nano-orbitronics in silicon
Shallow donor impurities in silicon, once frozen out at low temperature, share many properties in common with free hydrogen atoms [1]. They have long been the subject of spectroscopic investigation, but it is ...
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Article
Open AccessSi:P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars
Laboratory spectroscopy of atomic hydrogen in a magnetic flux density of 105 T (1 gigagauss), the maximum observed on high-field magnetic white dwarfs, is impossible because practically available fields are about...
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Article
Coherent control of Rydberg states in silicon
When an atom is excited into a 'Rydberg' state, its electronic wavefunction can extend from less than 0.1 nanometres to several nanometres or more. This process can be used to induce and coherently control int...
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Chapter and Conference Paper
Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells
We have used time resolved spectroscopy to measure the relaxation of spin polarisation in InSb/AlInSb quantum wells as a function of temperature and mobility. The results are consistent with the degenerate D’Y...
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Chapter and Conference Paper
Temperature Dependence of the Electron Lande g-Factor in InSb
We report Larmor precession in bulk InSb observed up to 300K in the time domain by means of the circularly polarized pump-probe technique. We show that provided we include only the dilational change of the ene...
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Article
Spin Dynamics in Narrow-Gap Semiconductor Epitaxial Layers
We report on investigation of the spin dynamics in InAs and InSb films grown on GaAs at a temperature range from 77 K to 290 K. For both materials, the large lattice mismatch with the GaAs substrate results i...
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Chapter
Band Structure and High-pressure Measurements
Determination of the electronic energy vs momentum relationship in semiconductors is essential for the prediction of almost all of their properties. In materials useful for mid-infrared applications, the simplest...
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Chapter
Time-Resolved Studies of Intersubband Relaxation Using the free Electron Laser
The knowledge of intersubband lifetimes is important for the design of intersubband based emitters and detectors. In wide GaAs/AlGaAs quantum wells, where the intersubband spacing is smaller than the optical p...
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Article
Infrared free-electron laser measurement of power limiting by two-photon absorption in InSb
We have performed the first experiment on the free-electron laser (CLIO) at the Laboratoire pour l'Utilisation du Rayonnement Électromagnétique (LURE). In a transmission experiment we observed strong power lim...
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Article
Refractive indices of (AlAs)(GaAs) short-period superlattices
The refractive indices of short-period binary (AlAs)m(GaAs)n superlattices, wherem = n, were investigated by measuring the beam divergences of optical waveguides using these superlattices as the core material. It...
