Skip to main content

8 Result(s)

within S. J. Sweeney Remove this filter

and

  1. Article

    Open Access

    Challenges for room temperature operation of electrically pumped GeSn lasers

    Recent demonstrations of room-temperature lasing in optically pumped GeSn show promise for future CMOS compatible lasers for Si-photonics applications. However, challenges remain for electrically pumped device...

    A. R. Ellis, D. A. Duffy, I. P. Marko, S. Acharya, W. Du, S. Q-. Yu… in Scientific Reports (2024)

    Download PDF (1838 KB) View Article

  2. No Access

    Article

    Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures

    This paper reports on laser excitation power dependent photoluminescence (PL) studies on epitaxial GaAs1−xBix (2.3% < x < 10.4%) layers with thicknesses of 30–40 nm which are compressively strained onto GaAs subs...

    Z. Batool, K. Hild, I. Marko, A. R. Mohmad… in Journal of Materials Science: Materials in… (2023)

  3. Article

    Open Access

    Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)

    GaInAsSb/GaSb based quantum well vertical cavity surface emitting lasers (VCSELs) operating in mid-infrared spectral range between 2 and 3 micrometres are of great importance for low cost gas monitoring applic...

    A. B. Ikyo, I. P. Marko, K. Hild, A. R. Adams, S. Arafin, M.-C. Amann… in Scientific Reports (2016)

    Download PDF (1541 KB) View Article

  4. No Access

    Chapter

    Bismide-Based Photonic Devices for Near- and Mid-Infrared Applications

    Bismides are a new class of III–V semiconductor alloys which are gaining interest due to their many potential applications. In this chapter we show how the addition of bismuth atoms to III–V alloys gives rise ...

    S. J. Sweeney, I. P. Marko, S. R. **, K. Hild, Z. Batool… in Bismuth-Containing Compounds (2013)

  5. Article

    Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

    We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength photodiodes grown under varying conditions by molecular beam epitaxy and subjected to postgrowth rapid thermal annealin...

    S.L. Tan, C.J. Hunter, S. Zhang, L.J.J. Tan, Y.L. Goh… in Journal of Electronic Materials (2012)

    Download PDF (707 KB)

  6. No Access

    Article

    Comparative Study of Pt/Pd and Pt–Rh/Pt Thermocouples

    The Pt/Pd thermocouple has demonstrated superior thermoelectric drift and homogeneity performance over conventional Pt–Rh/Pt thermocouples. Here, we present a systematic comparison of the drift and homogeneity...

    O. Ongrai, J. V. Pearce, G. Machin, S. J. Sweeney in International Journal of Thermophysics (2010)

  7. No Access

    Article

    Temperature insensitive quantum dot lasers: are we really there yet?

    Twenty five years ago Arakawa suggested that by confining carriers in three dimensions (in quantum dots) a temperature insensitive threshold current (Ith) could be achieved in semiconductor lasers. In this paper ...

    N. F. Massé, I. P. Marko, A. R. Adams… in Journal of Materials Science: Materials in… (2009)

  8. No Access

    Chapter

    Band Structure and High-pressure Measurements

    Determination of the electronic energy vs momentum relationship in semiconductors is essential for the prediction of almost all of their properties. In materials useful for mid-infrared applications, the simplest...

    B. N. Murdin, A. R. Adams, S. J. Sweeney in Mid-infrared Semiconductor Optoelectronics (2006)